N Channel MOSFET ElecSuper SI3134KW TP ES Featuring Low Gate Charge and DC DC Conversion Performance
Key Attributes
Model Number:
SI3134KW-TP-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
880mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
220mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
33pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SI3134KW-TP-ES
Package:
SOT-323
Product Description
Product Overview
The SI3134KW-TP-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This is a standard, Pb-free product.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Material: Halogen free
- Certifications: UL 94V-0
- Package: SOT-323
- Marking: 34KQ
- Packing: Tape & Reel (3,000 PCS per reel)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.35 | 0.75 | 1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.5A | 220 | 300 | m | |
| VGS=2.5V, ID=0.4A | 290 | 400 | m | |||
| VGS=1.8V, ID=0.2A | 420 | 700 | m | |||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 33 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 20 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 10 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.5A | 0.8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.5A | 0.3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.5A | 0.15 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 4 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 18.8 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 10 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 23 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=0.5A | 1.5 | V | ||
| ABSOLUTE MAXIMUM RATING & THERMAL CHARACTERISTICS | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | 0.88 | A | ||
| TA=75C | 0.68 | A | ||||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Pulsed Drain Current | IDM | 3.52 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient Thermal Resistance | RJA | t 10s | 357 | C/W | ||
2504101957_ElecSuper-SI3134KW-TP-ES_C7527997.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
