Power Switch N Channel MOSFET ElecSuper DMP1045U 7 ES Featuring Low Gate Charge and Trench Technology
Key Attributes
Model Number:
DMP1045U-7(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
75mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
352pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
DMP1045U-7(ES)
Package:
SOT-23
Product Description
Product Overview
The DMP1045U-7(ES) is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 3.0 | A | ||
| Continuous Drain Current | ID | TA=100°C | 2.0 | A | ||
| Maximum Power Dissipation | PD | 1.5 | W | |||
| Pulsed Drain Current | IDM | 12 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 83 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.4 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3A | 75 | 100 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=2A | 85 | 120 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 352 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 30 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 23 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDD=30V, ID=3A | 9 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDD=30V, ID=3A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDD=30V, ID=3A | 2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=30V, ID=2A, RG=3Ω | 5 | ns | ||
| Rise Time | tr | VGS=10V, VDD=30V, ID=2A, RG=3Ω | 7 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=30V, ID=2A, RG=3Ω | 37 | ns | ||
| Fall Time | tf | VGS=10V, VDD=30V, ID=2A, RG=3Ω | 22 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=2A | 1.5 | V | ||
2504101957_ElecSuper-DMP1045U-7-ES_C42412352.pdf
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