ElecSuper FDS4435BZ ES P Channel Enhancement MOSFET Ideal for Charging Circuits and Power Switching
Key Attributes
Model Number:
FDS4435BZ-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.5A
RDS(on):
13.5mΩ@10V;18.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 P-Channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
1.23nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
26.4nC@10V
Mfr. Part #:
FDS4435BZ-ES
Package:
SOP8
Product Description
Product Overview
The FDS4435BZ-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Code: FDS4435BZ-ES
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TA=25°C | -10.5 | A | ||
| Continuous Drain Current | ID | TA=70°C | -8.0 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 3.1 | W | ||
| Maximum Power Dissipation | PD | TA=70°C | 2.0 | W | ||
| Pulsed Drain Current | IDM | -80 | A | |||
| Avalanche Current, Single Pulsed | IAS | a: Tj=25°C,VDD=-30V,VG=-10V,L=0.3mH,Rg=25Ω. | -18.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a: Tj=25°C,VDD=-30V,VG=-10V,L=0.3mH,Rg=25Ω. | 51 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Single Operation Thermal Resistance | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | 32 | 40 | °C/W | ||
| Junction-to-Lead Thermal Resistance | RθJL | 3.2 | 4 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±25V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-10A | 13.5 | 21 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 18.5 | 27 | mΩ | |
| Input Capacitance | CISS | VGS=0V VDS =-15V f=1MHz | 1230 | pF | ||
| Output Capacitance | COSS | VGS=0V VDS =-15V f=1MHz | 160 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V VDS =-15V f=1MHz | 145 | pF | ||
| Gate Resistance | Rg | f=1MHZ | 10 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V VDS=-15V ID =-10A | 26.4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V VDS=-15V ID =-10A | 6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V VDS=-15V ID =-10A | 4.3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V VDS=-15V RL=1Ω RG=3Ω | 18 | ns | ||
| Rise Time | tr | VGS=-10V VDS=-15V RL=1Ω RG=3Ω | 22 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V VDS=-15V RL=1Ω RG=3Ω | 55 | ns | ||
| Fall Time | tf | VGS=-10V VDS=-15V RL=1Ω RG=3Ω | 42 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -0.75 | -1 | V | |
2504101957_ElecSuper-FDS4435BZ-ES_C21713853.pdf
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