ElecSuper IRFR120NTRPBF ES N Channel MOSFET Featuring Low RDS ON Ideal for DC DC Conversion Circuits
Key Attributes
Model Number:
IRFR120NTRPBF-ES
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9A
RDS(on):
100mΩ@10V;110mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Input Capacitance(Ciss):
605pF
Output Capacitance(Coss):
40pF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
IRFR120NTRPBF-ES
Package:
TO-252
Product Description
Product Description
The IRFR120NTRPBF-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This is a standard product and is Pb-free.
Product Attributes
- Brand: ElecSuper
- Model: IRFR120NTRPBF-ES
- Material: Halogen free
- Certifications: UL 94V-0
- Package: TO-252
- Flammability Rating: UL 94V-0
- Reel Size: 13 Inches
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Drain-Source Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | 9 | A | TC=25C |
| Continuous Drain Current | ID | 7 | A | TC=75C |
| Maximum Power Dissipation | PD | 20 | W | TC=25C |
| Pulsed Drain Current | IDM | 36 | A | |
| Avalanche Current Single Pulsed | IAS | 10.5 | A | a: VDD=100V, VGS=10V, L=0.3mH, RG=25, Starting TJ=25. |
| Avalanche energy Single Pulsed | EAS | 16 | mJ | a: VDD=100V, VGS=10V, L=0.3mH, RG=25, Starting TJ=25. |
| Operating Junction Temperature | TJ | 150 | C | |
| Lead Temperature | TL | 260 | C | |
| Storage Temperature Range | Tstg | -55 to 150 | C | |
| Junction-to-Case Thermal Resistance | RJC | 6.3 | C/W | Single Operation, t 10 s |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | uA | VDS=100V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=20V |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.5 | V | VGS=VDS, ID=250uA |
| Drain-to-source On-resistance | RDS(on) | 100 - 115 | m | VGS=10V, ID=5A |
| Drain-to-source On-resistance | RDS(on) | 110 - 140 | m | VGS=4.5V, ID=3A |
| Forward Transconductance | gFS | 40 | S | VDS=5.0V, ID=5A |
| Input Capacitance | CISS | 605 | pF | VGS=0V, f=1MHz, VDS=25V |
| Output Capacitance | COSS | 40 | pF | VGS=0V, f=1MHz, VDS=25V |
| Reverse Transfer Capacitance | CRSS | 23 | pF | VGS=0V, f=1MHz, VDS=25V |
| Total Gate Charge | QG(TOT) | 11 | nC | VGS=10V, VDS=30V, ID=5A |
| Gate-to-Source Charge | QGS | 2.1 | nC | VGS=10V, VDS=30V, ID=5A |
| Gate-to-Drain Charge | QGD | 2.4 | nC | VGS=10V, VDS=30V, ID=5A |
| Turn-On Delay Time | td(ON) | 6.8 | ns | VGS=10V, VDS=30V, ID=5A, RGEN=3 |
| Rise Time | tr | 5 | ns | VGS=10V, VDS=30V, ID=5A, RGEN=3 |
| Turn-Off Delay Time | td(OFF) | 15.8 | ns | VGS=10V, VDS=30V, ID=5A, RGEN=3 |
| Fall Time | tf | 6 | ns | VGS=10V, VDS=30V, ID=5A, RGEN=3 |
| Forward Voltage | VSD | 0.45 - 1.5 | V | VGS=0V, IS=1A |
2504101957_ElecSuper-IRFR120NTRPBF-ES_C22379628.pdf
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