P Channel MOSFET ElecSuper ESJ2305 designed for DC DC converters and charging circuits in SOT 23 package
Key Attributes
Model Number:
ESJ2305
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
3.8A
RDS(on):
29mΩ@4.5V,3.8A
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
101pF@6V
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
500pF@6V
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
ESJ2305
Package:
SOT-23
Product Description
Product Overview
The ESJ2305 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: ESJ2305
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -12 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current (TA=25°C) | ID | -3.8 | A | |||
| Continuous Drain Current (TA=100°C) | ID | -2.3 | A | |||
| Maximum Power Dissipation (TA=25°C) | PD | 1.2 | W | |||
| Pulsed Drain Current | IDM | -15 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -12 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3.8A | 29 | 40 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-3A | 45 | 60 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-1.8V, ID=-2.5A | 67 | 85 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-6V, f=1MHz | 500 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-6V, f=1MHz | 118 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-6V, f=1MHz | 101 | pF | ||
| Total Gate Charge | QG | VGS=-4.5V, VDS=-6V, ID =-3.8A | 8.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-6V, ID =-3.8A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-6V, ID =-3.8A | 2.6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-6V, ID=-3.8A, RG=3Ω | 6 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-6V, ID=-3.8A, RG=3Ω | 35 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-6V, ID=-3.8A, RG=3Ω | 50 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-6V, ID=-3.8A, RG=3Ω | 52 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-3.8A | -1.5 | V | ||
2504101957_ElecSuper-ESJ2305_C42420852.pdf
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