power switch solution ElecSuper AM2394NE ES N Channel MOSFET with low gate charge and rugged design
Product Overview
The AM2394NE(ES) is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering a reliable and rugged solution with a low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Pb-free: Yes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.65 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=2.5A | 90 | 135 | m | |
| VGS=4.5V, ID=2A | 120 | 195 | m | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 206 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 29 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 1.4 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=25V, ID=2.5A | 4.2 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=25V, ID=2.5A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=25V, ID=2.5A | 1.1 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=25V, ID=2.5A, RG=2 | 14.7 | ns | ||
| Rise Time | tr | VGS=10V, VDS=25V, ID=2.5A, RG=2 | 3.5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=25V, ID=2.5A, RG=2 | 20.9 | ns | ||
| Fall Time | tf | VGS=10V, VDS=25V, ID=2.5A, RG=2 | 2.7 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.8 | 1.5 | V |
2504101957_ElecSuper-AM2394NE-ES_C42382013.pdf
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