P Channel MOSFET ElecSuper PJM10H01PSA ideal for power switch charging circuits and DC DC conversion
Key Attributes
Model Number:
PJM10H01PSA
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
580mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 P-Channel
Output Capacitance(Coss):
14pF
Input Capacitance(Ciss):
600pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
19.6nC@10V
Mfr. Part #:
PJM10H01PSA
Package:
SOT-23
Product Description
Product Overview
The PJM10H01PSA is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high-density cell design, and a reliable, rugged construction.
Product Attributes
- Brand: SuperMOS
- Model: PJM10H01PSA
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Origin: ElecSuper Incorporated
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -0.5 | A | ||
| Continuous Drain Current | ID | TA=100°C | -0.3 | A | ||
| Maximum Power Dissipation | PD | 0.4 | W | |||
| Pulsed Drain Current | IDM | -2.3 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 280 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | -100 | nA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.5 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-0.5A | 580 | 788 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5A, ID=-0.3A | 615 | 858 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-50V, f=1MHz | 600 | pF | ||
| Output Capacitance | COSS | 14 | pF | |||
| Reverse Transfer Capacitance | CRSS | 10 | pF | |||
| Total Gate Charge | QG | VGS=-10V, VDS=-50V, ID=-0.5A | 19.6 | nC | ||
| Gate-to-Source Charge | QGS | 6 | nC | |||
| Gate-to-Drain Charge | QGD | 4.2 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-50V, ID=-0.5A, RG=3Ω | 13.5 | ns | ||
| Rise Time | tr | 3.8 | ns | |||
| Turn-Off Delay Time | td(OFF) | 42 | ns | |||
| Fall Time | tf | 6.4 | ns | |||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-0.5A | -0.45 | -1.2 | V | |
2504101957_ElecSuper-PJM10H01PSA_C39832205.pdf
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