2 in 1 Package IGBT Module Fuji Electric 2MBI400VB-060-50 for High Speed Switching Applications
Key Attributes
Model Number:
2MBI400VB-060-50
Product Custom Attributes
Pd - Power Dissipation:
1.97kW
Td(off):
100ns
Td(on):
650ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
25.6nF
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6.2V@400mA
Operating Temperature:
-55℃~+150℃
Reverse Recovery Time(trr):
200ns
Mfr. Part #:
2MBI400VB-060-50
Package:
Screw Terminals
Product Description
Product Overview
The 2MBI400VB-060-50 is a V series IGBT Power Module designed for high-speed switching applications. It features a 2-in-1 package, voltage drive capability, and a low inductance module structure, making it suitable for AC-switch applications in UPS and PCS systems.
Product Attributes
- Brand: Fuji Electric
- Weight: 240g (typ.)
Technical Specifications
| Item | Symbol | Conditions | Unit | Min. | Typ. | Max. |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter voltage | V CES | V | 600 | |||
| Collector current | I C | Continuous, T C= 25C | A | 400 | ||
| Collector current pulse | -I C pulse | 1ms | A | 800 | ||
| Junction temperature | T j | C | 175 | |||
| Storage temperature | T stg | C | -40 | 125 | ||
| Isolation voltage | V iso | AC: 1min. Between terminal and copper base | V | 2500 | ||
| Screw torque | Mounting Terminals | N m | 2.5 ~ 3.5 | 3.5 | ||
| Electrical Characteristics | ||||||
| Collector-Emitter saturation voltage | V CE(sat) (chip) | V GE=15V, I C=400A, T j=150C | V | 1.62 | 2.20 | |
| Collector-Emitter saturation voltage | V CE(sat) (chip) | V GE=15V, I C=400A, T j=125C | V | 1.65 | ||
| Collector-Emitter saturation voltage | V CE(sat) (chip) | V GE=15V, I C=400A, T j=25C | V | 1.60 | 2.05 | |
| Forward on voltage | V F (chip) | I F=400A, T j=150C | V | 1.50 | 1.75 | |
| Forward on voltage | V F (chip) | I F=400A, T j=125C | V | 1.47 | ||
| Forward on voltage | V F (chip) | I F=400A, T j=25C | V | 1.65 | ||
| Zero gate voltage collector current | I CES | V GE=0V, V CE=600V, T j=150C | mA | 400 | ||
| Zero gate voltage collector current | I CES | V GE=0V, V CE=600V, T j=125C | mA | 300 | ||
| Zero gate voltage collector current | I CES | V GE=0V, V CE=600V, T j=25C | mA | 200 | ||
| Gate-Emitter leakage current | I GES | V CE=0V, V GE=20V | nA | 2.0 | ||
| Gate-Emitter threshold voltage | V GE(th) | V CE=20V, I C=400mA | V | 6.2 | 6.7 | 7.2 |
| Input capacitance | C ies | V CE=10V, V GE=0V, =1MHz | nF | 25.6 | ||
| Turn-on time | t on | V CC=300V, I C=400A, V GE=15V, R g=3.3, T j=150C, L s=30nH | nsec | 70 | ||
| Turn-off time | t off | V CC=300V, I C=400A, V GE=15V, R g=3.3, T j=150C, L s=30nH | nsec | 100 | ||
| Reverse recovery time | t rr | I F=400A, T j=150C | nsec | 1970 | ||
| Reverse recovery time | t rr | I F=400A, T j=125C | nsec | 800 | ||
| Reverse recovery time | t rr | I F=400A, T j=25C | nsec | |||
| Thermal Resistance Characteristics | ||||||
| Thermal resistance (1device) | R th(j-c) | IGBT | C/W | 0.076 | ||
| Contact thermal resistance (1device) | R th(c-f) | with thermal compound | C/W | 0.025 | ||
2411220026_Fuji-Electric-2MBI400VB-060-50_C35796235.pdf
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