NPN transistor FUXINSEMI FMMT493 general purpose complementary to FMMT593 packaged in SOT23 for electronic
Key Attributes
Model Number:
FMMT493
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT493
Package:
SOT-23
Product Description
FMMT493 TRANSISTOR (NPN)
The FMMT493 is an NPN transistor designed for general-purpose applications. It offers a complementary type to the FMMT593 and is packaged in a standard SOT-23 surface-mount case.
Product Attributes
- Brand: Fuxin Semiconductor (implied by URL)
- Marking: 493
- Complementary Type: FMMT593
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| VCBO | Collector-Base Voltage | 120 | V | |||
| VCEO | Collector-Emitter Voltage | 100 | V | |||
| VEBO | Emitter-Base Voltage | 5 | V | |||
| IC | Collector Current | 1000 | mA | |||
| PC | Collector Power Dissipation | 250 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 500 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC=100A, IE=0 | 120 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=10mA, IB=0 | 100 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=100A, IC=0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB=100V, IE=0 | 0.1 | A | ||
| ICES | Collector cut-off current | VCES=100V, IE=0 | 0.1 | A | ||
| IEBO | Emitter cut-off current | VEB=4V, IC=0 | 0.1 | A | ||
| hFE | DC current gain | VCE=10V, IC=1mA | 100 | |||
| VCE=10V, IC=250mA | 100 | 300 | ||||
| VCE=10V, IC=0.5A | 60 | |||||
| VCE=10V, IC=1A | 20 | |||||
| VCE(sat) | Collector-emitter saturation voltage | IC=500mA, IB=50mA | 0.3 | V | ||
| IC=1A, IB=100mA | 0.6 | V | ||||
| VBE(sat) | Base-emitter saturation voltage | IC=1A, IB=100mA | 1.15 | V | ||
| VBE | Base-emitter voltage | VCE=10V, IC=1A | 1 | V | ||
| fT | Transition frequency | VCE=10V,IC=50mA, f=100MHz | 150 | MHz | ||
| Cob | Collector output capacitance | VCB=10V, IE=0, f=1MHz | 10 | pF | ||
2209201730_FUXINSEMI-FMMT493_C5178957.pdf
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