86--136 6733 2386
quality Compact SOT23 package FUXINSEMI MMBTA13 semiconductor device for electronic application integration factory
quality Compact SOT23 package FUXINSEMI MMBTA13 semiconductor device for electronic application integration factory

Compact SOT23 package FUXINSEMI MMBTA13 semiconductor device for electronic application integration

Key Attributes
Model Number: MMBTA13
Product Custom Attributes
Mfr. Part #:
MMBTA13
Package:
SOT-23
Product Description

Product Overview

The MMBTA13 is a semiconductor device designed for electronic applications. Its SOT-23 package information is detailed below, providing essential dimensions for integration into various electronic circuits.

Product Attributes

  • Brand: Fuxin Semiconductor
  • Package Type: SOT-23

Technical Specifications

SymbolDimensions In Millimeters (Min./Max.)Dimensions In Inches (Min./Max.)
A0.900 / 1.1500.035 / 0.045
A10.000 / 0.1000.000 / 0.004
A20.900 / 1.0500.035 / 0.041
b0.300 / 0.5000.012 / 0.020
c0.080 / 0.1500.003 / 0.006
D2.800 / 3.0000.110 / 0.118
E1.200 / 1.4000.047 / 0.055
E12.250 / 2.5500.089 / 0.100
e0.950 TYP.0.037 TYP.
e11.800 / 2.0000.071 / 0.079
L0.550 REF.0.022 REF.
L10.300 / 0.5000.012 / 0.020

2409302330_FUXINSEMI-MMBTA13_C3018497.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes factory
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.