NPN Transistor FUXINSEMI BC807-25 General Purpose SOT-23 Package High DC Current Gain Semiconductor
Key Attributes
Model Number:
BC807-25
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC807-25
Package:
SOT-23
Product Description
BC807 NPN Transistor
The BC807 is an NPN epitaxial planar die construction transistor, ideally suited for automatic insertion. A complementary PNP type (BC817) is available. It offers a high DC current gain and is designed for general-purpose applications.
Product Attributes
- Brand: FUXINSEMICONDUCTOR
- Complementary Type: BC817 (PNP)
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-Base Breakdown Voltage | VCBO | IC= -10A, IE=0 | -50 | V | |
| Collector-Emitter Breakdown Voltage | VCEO | IC= -10mA, IB=0 | -45 | V | |
| Emitter-Base Breakdown Voltage | VEBO | IE= -1A, IC=0 | -5 | V | |
| Collector Cut-off Current | ICBO | VCB= -45V, IE=0 | -0.1 | A | |
| Emitter Cut-off Current | IEBO | VEB= -4V, IC=0 | -0.1 | A | |
| DC Current Gain | hFE(1) | VCE= -1V, IC= -100mA | 100 | 600 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-500mA, IB= -50mA | -0.7 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC= -500mA, IB= -50mA | -1.2 | V | |
| Transition Frequency | fT | VCE= -5V, IC= -10mA, f=100MHz | 100 | MHz | |
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 300 | mW | |
| Thermal Resistance Junction To Ambient | RJA | (Ta=25 unless otherwise noted) | 417 | /W | |
| Operation Junction and Storage Temperature Range | TJ,Tstg | (Ta=25 unless otherwise noted) | -55 | +150 |
hFE Classification
| Rank | Range | Marking |
| BC807-16 | 100-250 | 5A |
| BC807-25 | 160-400 | 5B |
| BC807-40 | 250-600 | 5C |
2010271837_FUXINSEMI-BC807-25_C908258.pdf
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