Fast switching P channel MOSFET ElecSuper BSS84PWH6327 ES designed for operation in DC DC converters
Key Attributes
Model Number:
BSS84PWH6327(ES)
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
180mA
RDS(on):
6.3Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.6pF@25V
Number:
1 P-Channel
Pd - Power Dissipation:
300mW
Input Capacitance(Ciss):
17pF@25V
Gate Charge(Qg):
1.1nC@4.5V
Mfr. Part #:
BSS84PWH6327(ES)
Package:
SOT-323
Product Description
Product Overview
The BSS84PWH6327(ES) is a P-Channel enhancement mode MOSFET utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering fast switching, high density cell design, and a reliable, rugged construction. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -0.18 | A | ||
| Continuous Drain Current | ID | TA=100°C | -0.12 | A | ||
| Maximum Power Dissipation | PD | 0.30 | W | |||
| Pulsed Drain Current | IDM | -0.74 | A | |||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 417 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-60V | -100 | nA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-0.15A | 3.5 | 5.2 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-0.1A | 4.5 | 6.3 | Ω | |
| Input Capacitance | CISS | VGS=0V, VDS =-25V f=1MHz | 17 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-25V f=1MHz | 4 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-25V f=1MHz | 1.6 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-25V ID=-0.1A | 1.1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-25V ID=-0.1A | 0.3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-25V ID=-0.1A | 0.2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-25V ID=-0.1A, RG=6Ω | 4.8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-25V ID=-0.1A, RG=6Ω | 19 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-25V ID=-0.1A, RG=6Ω | 52 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-25V ID=-0.1A, RG=6Ω | 32 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-0.15A | -0.45 | -1.5 | V | |
2411121459_ElecSuper-BSS84PWH6327-ES_C42379941.pdf
Related Products
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
