npn silicon transistor FUXINSEMI S9013 designed for amplification and switching in electronic devices
Key Attributes
Model Number:
S9013
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9013
Package:
SOT-23
Product Description
Product Overview
The S9013 is a general-purpose NPN silicon transistor designed for various electronic applications. It features high collector current capability, excellent hFE linearity, and is complementary to the S9012 transistor. This device is suitable for a wide range of circuit designs requiring reliable amplification and switching.
Product Attributes
- Brand: Fuxinsemi
- Type: NPN Silicon Transistor
- Package: SOT-23
- Classification: General Purpose Transistors
- Complementary to: S9012
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=0.1mA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=0.1mA, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | uA | ||
| Collector cut-off current | ICEO | VCE=20V, IB=0 | 0.1 | uA | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | uA | ||
| DC current gain | hFE(1) | VCE=1V, IC=50mA | 120 | 400 | ||
| DC current gain | hFE(2) | VCE=1V, IC=500mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB=50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB=50mA | 1.2 | V | ||
| Base-emitter voltage | VBE | VCB=1V,IC=10mA | 0.7 | V | ||
| Transition frequency | fT | VCE=6V,IC=20mA, f=30MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=6V, IE=0, f=1MHz | 8 | pF | ||
| Collector Current | IC | Maximum Rating | 500 | mA | ||
| Collector Power Dissipation | PC | Maximum Rating | 300 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | Maximum Rating | 416 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | Maximum Rating | -55 | +150 |
2101141202_FUXINSEMI-S9013_C908254.pdf
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