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quality Glass Passivated Chip Junction Miniature Surface Mount Bridge Rectifier FUXINSEMI MB10S 1000V Voltage factory
quality Glass Passivated Chip Junction Miniature Surface Mount Bridge Rectifier FUXINSEMI MB10S 1000V Voltage factory

Glass Passivated Chip Junction Miniature Surface Mount Bridge Rectifier FUXINSEMI MB10S 1000V Voltage

Key Attributes
Model Number: MB10S
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.1V@800mA
Current - Rectified:
800mA
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
MB10S
Package:
MBS
Product Description

Product Overview

The Fuxinsemiconductor MB05S thru MB10S series are 0.8A Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers, offering voltage ratings from 50V to 1000V. These rectifiers are designed for space-saving on printed circuit boards and are ideal for automated replacement. They feature reliable, low-cost construction with molded plastic technology and glass-passivated chip junctions. Lead-free parts meet RoHS requirements, with a "-H" suffix indicating Halogen-free options.

Product Attributes

  • Brand: Fuxinsemiconductor
  • Construction: Molded plastic technology, Glass passivated chip junctions
  • Certifications: Lead-free parts meet RoHS requirements. Suffix "-H" indicates Halogen free part.
  • Flame Retardant: UL94-V0 rated epoxy
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Marked on body
  • Mounting Position: Any

Technical Specifications

Symbol Description MB05S MB1S MB2S MB4S MB6S MB8S MB10S Unit
VRRM Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Voltage 35 70 140 280 420 560 700 V
VDC Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V
I(AV) Maximum Average Forward Rectified Current @TJ=25 0.8 A
IFSM Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method) 30 A
VF Maximum Forward Voltage at 0.8A DC 1.1 V
IR Maximum DC Reverse Current @TJ=25 at Rated DC Bolcking Voltage 500 A
IR Maximum DC Reverse Current @TJ=125 at Rated DC Bolcking Voltage 10 mA
I2t I2 t Rating for Fusing(t<8.3ms) 15 A2s
CJ Typical Junction Capacitance Per Element(Note1) 85 pF
RJA Typical Thermal Resistance (Note2) 3.74 /W
TJ Operating Temperature Range -55 to +150
TSTG Storage Temperature Range -55 to +150

Note 1: Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

Note 2: Thermal resistance from junction to ambient mounted on P.C.B with 0.5*0.5"(13*13mm)copper pads.

Package Dimensions (MBS)

Symbol Dimensions in inches and (millimeters)
A 0.023 (0.58)
B 0.030 (0.76)
C 0.070 (1.78)
D 0.226 (5.75)

Marking:

  • MB05S
  • MB1S
  • MB2S
  • MB4S
  • MB6S
  • MB8S
  • MB10S

Halogen Free Marking: Suffix "-H" indicates Halogen free part, e.g., MB05S-H.


2011091106_FUXINSEMI-MB10S_C915623.pdf

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