molded plastic bridge rectifier FUXINSEMI GBU2010 featuring glass passivated chip and halogen free options
Product Overview
The GBU series of Glass Passivated Single Phase Bridge Rectifiers offers a reliable and cost-effective solution for rectification applications. Designed for non-automatic and automatic insertion, these rectifiers feature a molded plastic construction for space-saving and low-cost benefits. They are ideal for applications requiring efficient power conversion with a voltage range from 50V to 1000V. The lead-free parts meet RoHS requirements, and suffix "-H" indicates Halogen-free options.
Product Attributes
- Brand: Fuxinsemiconductor
- Construction: Molded plastic technology
- Chip Type: Glass passivated
- Flame Retardant: Epoxy UL94-V0 rated
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Marked on body
- Mounting Position: Any
- Certifications: RoHS compliant (lead-free parts)
- Halogen Free: Available with suffix "-H"
Technical Specifications
| Symbol | GBU20005 | GBU2001 | GBU2002 | GBU2004 | GBU2006 | GBU2008 | GBU2010 | Units |
|---|---|---|---|---|---|---|---|---|
| VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| VRWM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | VDC |
| VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| IF(AV) (Note 1) @TC=90C | 20.0 | A | ||||||
| IFSM 8.3ms Single half sine-wave | 72 | A | ||||||
| I2t Rating for fusing (t <8.3ms) | 374 | As | ||||||
| VFM @IF=10A | 1.1 | V | ||||||
| VFM @IF=20A | 1.2 | V | ||||||
| IR @Rated DC Blocking Voltage @TJ=25C | 5.0 | uA | ||||||
| IR @Rated DC Blocking Voltage @TJ=125C | 200 | uA | ||||||
| RJA (Typical) | 35 | C/W | ||||||
| RJC (Typical) | 5.0 | C/W | ||||||
| RJL (Typical) | 2.0 | C/W | ||||||
| CJ (Typical) Note 2 | 100 | pF | ||||||
| Dielectric Strength | 2500 | VRMS | ||||||
| TJ, TSTG | -55 to +150 | C | ||||||
| Installation Torque (Max) | 8.0 | Kgf.cm | ||||||
Notes:
1. Mounted on glass epoxy PC board with 1.3mm solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2010262106_FUXINSEMI-GBU2010_C908181.pdf
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