molded plastic bridge rectifier FUXINSEMI GBU2010 featuring glass passivated chip and halogen free options

Key Attributes
Model Number: GBU2010
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
300A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.2V@20A
Current - Rectified:
20A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
GBU2010
Package:
GBU
Product Description

Product Overview

The GBU series of Glass Passivated Single Phase Bridge Rectifiers offers a reliable and cost-effective solution for rectification applications. Designed for non-automatic and automatic insertion, these rectifiers feature a molded plastic construction for space-saving and low-cost benefits. They are ideal for applications requiring efficient power conversion with a voltage range from 50V to 1000V. The lead-free parts meet RoHS requirements, and suffix "-H" indicates Halogen-free options.

Product Attributes

  • Brand: Fuxinsemiconductor
  • Construction: Molded plastic technology
  • Chip Type: Glass passivated
  • Flame Retardant: Epoxy UL94-V0 rated
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Marked on body
  • Mounting Position: Any
  • Certifications: RoHS compliant (lead-free parts)
  • Halogen Free: Available with suffix "-H"

Technical Specifications

Symbol GBU20005 GBU2001 GBU2002 GBU2004 GBU2006 GBU2008 GBU2010 Units
VRRM 50 100 200 400 600 800 1000 V
VRWM 50 100 200 400 600 800 1000 VDC
VRMS 35 70 140 280 420 560 700 V
IF(AV)
(Note 1) @TC=90C
20.0 A
IFSM
8.3ms Single half sine-wave
72 A
I2t Rating for fusing (t <8.3ms) 374 As
VFM @IF=10A 1.1 V
VFM @IF=20A 1.2 V
IR @Rated DC Blocking Voltage @TJ=25C 5.0 uA
IR @Rated DC Blocking Voltage @TJ=125C 200 uA
RJA (Typical) 35 C/W
RJC (Typical) 5.0 C/W
RJL (Typical) 2.0 C/W
CJ (Typical) Note 2 100 pF
Dielectric Strength 2500 VRMS
TJ, TSTG -55 to +150 C
Installation Torque (Max) 8.0 Kgf.cm

Notes:
1. Mounted on glass epoxy PC board with 1.3mm solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.


2010262106_FUXINSEMI-GBU2010_C908181.pdf

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