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quality Schottky Barrier Rectifier FUXINSEMI SS34A with JEDEC DO214AC Package and RoHS Directive Compliance factory
quality Schottky Barrier Rectifier FUXINSEMI SS34A with JEDEC DO214AC Package and RoHS Directive Compliance factory

Schottky Barrier Rectifier FUXINSEMI SS34A with JEDEC DO214AC Package and RoHS Directive Compliance

Key Attributes
Model Number: SS34A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
80A
Reverse Leakage Current (Ir):
500uA
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
550mV@3A
Current - Rectified:
3A
Mfr. Part #:
SS34A
Package:
SMA(DO-214AC)
Product Description

Product Overview

The SS32A thru SS320A series are surface mount Schottky barrier rectifiers designed for high-efficiency applications. Featuring a metal silicon junction for majority carrier conduction, these rectifiers offer low power loss and high forward surge current capability. They are ideal for automated placement due to built-in strain relief and are housed in a JEDEC DO-214AC molded plastic body, compliant with RoHS Directive 2011/65/EU. These rectifiers are suitable for surface mounted applications and can withstand high temperature soldering.

Product Attributes

  • Brand: Fuxinsemi
  • Package: JEDEC DO-214AC (SMA)
  • Flammability Classification: Underwriters Laboratory 94V-0
  • Material: Metal silicon junction, majority carrier conduction
  • Compliance: RoHS Directive 2011/65/EU
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Mounting Position: Any

Technical Specifications

Symbol Unit SS32A SS33A SS34A SS345A SS35A SS36A SS38A SS310A SS315A SS320A
VRRM V 20 30 45 50 60 80 100 150 200
VRMS V 14 21 31.5 35 42 56 70 105 140
VDC V 20 30 45 50 60 80 100 150 200
I(AV) A 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70
IFSM (8.3ms) A 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0
VF (at 3.0A) V 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55
IR (at TA=25C, VR=rated) mA 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
IR (at TA=100C, VR=rated) mA 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0
CJ (NOTE 1) pF 70 70 70 70 70 70 70 70 70
RJA (NOTE 2) C/W 70 70 70 70 70 70 70 70 70
TJ, TSTG C -55 to +150
Dimensions (L x W x H) inches (mm) 0.177(4.50) x 0.108(2.75) x 0.060(1.52) (Max)

Notes:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. P.C.B. mounted with 2.0x2.0 (5.0x5.0cm) copper pad areas.


2304140030_FUXINSEMI-SS34A_C842788.pdf

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