synchronous buck converter MOSFET FETek FKD0016 with optimized gate charge and conduction performance
Key Attributes
Model Number:
FKD0016
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
22A
RDS(on):
47mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
115pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
52.1W
Input Capacitance(Ciss):
5.387nF@15V
Gate Charge(Qg):
84nC@10V
Mfr. Part #:
FKD0016
Package:
TO-252
Product Description
Product Overview
The FKD0016 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approval. Key advantages include Green Device availability, super low gate charge, and excellent Cdv/dt effect decline due to advanced high cell density Trench technology.
Product Attributes
- Brand: FETek Technology Corp.
- Product Type: N-Ch 100V Fast Switching MOSFETs
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit | Notes |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 22 | A | 1 | ||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 13.5 | A | 1 | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 4.2 | A | 1 | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 3.4 | A | 1 | ||
| IDM | Pulsed Drain Current | 45 | A | 2 | ||
| EAS | Single Pulse Avalanche Energy | 36.5 | mJ | 3 | ||
| IAS | Avalanche Current | 27 | A | |||
| PD@TC=25 | Total Power Dissipation | 52.1 | W | 4 | ||
| PD@TA=25 | Total Power Dissipation | 2 | W | 4 | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 2.4 | /W | 1 | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | 100 | --- | --- | V | VGS=0V , ID=250uA |
| BVDSS/TJ | BVDSS Temperature Coefficient | --- | 0.098 | --- | V/ | Reference to 25 , ID=1mA |
| RDS(ON) | Static Drain-Source On-Resistance | --- | 38 | 47 | m | VGS=10V , ID=20A 2 |
| RDS(ON) | Static Drain-Source On-Resistance | --- | 40 | 50 | m | VGS=4.5V , ID=15A 2 |
| VGS(th) | Gate Threshold Voltage | 1.3 | --- | 2.5 | V | VGS=VDS , ID =250uA |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.52 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | --- | --- | 10 | uA | VDS=80V , VGS=0V , TJ=25 |
| IDSS | Drain-Source Leakage Current | --- | --- | 100 | uA | VDS=80V , VGS=0V , TJ=55 |
| IGSS | Gate-Source Leakage Current | --- | --- | ±100 | nA | VGS=±20V , VDS=0V |
| gfs | Forward Transconductance | --- | 28.7 | --- | S | VDS=5V , ID=20A |
| Rg | Gate Resistance | --- | 1.6 | 3.2 | VDS=0V , VGS=0V , f=1MHz | |
| Qg | Total Gate Charge (10V) | --- | 60 | 84 | nC | VDS=80V , VGS=10V , ID=20A |
| Qgs | Gate-Source Charge | --- | 9.7 | 14 | nC | |
| Qgd | Gate-Drain Charge | --- | 11.8 | 16.5 | nC | |
| Td(on) | Turn-On Delay Time | --- | 10.4 | 21 | ns | VDD=50V , VGS=10V , RG=3.3 ID=20A |
| Tr | Rise Time | --- | 46 | 83 | ns | |
| Td(off) | Turn-Off Delay Time | --- | 54 | 108 | ns | |
| Tf | Fall Time | --- | 10 | 20 | ns | |
| Ciss | Input Capacitance | --- | 3848 | 5387 | pF | VDS=15V , VGS=0V , f=1MHz |
| Coss | Output Capacitance | --- | 137 | 192 | pF | |
| Crss | Reverse Transfer Capacitance | --- | 82 | 115 | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current | --- | --- | 22 | A | VG=VD=0V , Force Current 1,5 |
| ISM | Pulsed Source Current | --- | --- | 45 | A | 2,5 |
| VSD | Diode Forward Voltage | --- | --- | 1.2 | V | VGS=0V , IS=1A , TJ=25 2 |
| trr | Reverse Recovery Time | --- | 30 | --- | nS | IF=20A , dI/dt=100A/s , TJ=25 |
| Qrr | Reverse Recovery Charge | --- | 37 | --- | nC | |
2411220316_FETek-FKD0016_C5361882.pdf
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