N Channel MOSFET ElecSuper ES15N10G Designed for DC DC Conversion and Charging Circuit Applications
Key Attributes
Model Number:
ES15N10G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V;92mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
35W
Mfr. Part #:
ES15N10G
Package:
TO-252
Product Description
Product Overview
The ES15N10G is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Part Number: ES15N10G
- Material: Halogen free
- Certifications: UL 94V-0
- Package: TO-252
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=8.0A | 85 | 120 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=8.0A | 92 | 135 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=8.0A | 40 | S | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=8.0A | 1.5 | 2.0 | V | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 12 | A | ||
| Continuous Drain Current | ID | TC=70C | 9.5 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 35 | W | ||
| Maximum Power Dissipation | PD | TC=70C | 22.5 | W | ||
| Pulsed Drain Current | IDM | a | 48 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 10 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 15 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 110 | C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 3.5 | C/W | ||
2504101957_ElecSuper-ES15N10G_C5224293.pdf
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