ElecSuper AO4840 ES N Channel Enhancement Mode MOSFET for DC DC Conversion and Charging Circuits
Key Attributes
Model Number:
AO4840-ES
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
20mΩ@10V;28mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
2 N-Channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
410pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.5nC@10V
Mfr. Part #:
AO4840-ES
Package:
SOP8
Product Description
Product Overview
The AO4840-ES is an N-Channel enhancement mode MOSFET designed using advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Product Series: SuperMOS
- Package: SOP8
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 6.8 | A | ||
| Continuous Drain Current | ID | TA=75°C | 5.2 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 2 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 1.2 | W | ||
| Pulsed Drain Current | IDM | 27.2 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 11 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 18 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | (t ≤ 10s) | 48 | 62.5 | °C/W | |
| Junction-to-Lead Thermal Resistance | RθJL | 35 | 50 | °C/W | ||
| N-channel Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=6A | 20 | 25 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5A | 28 | 38 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=6A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=20V | 410 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=20V | 100 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=20V | 35 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=20V, ID=6A | 8.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=20V, ID=6A | 1.2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=20V, ID=6A | 2.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω | 4.4 | ns | ||
| Rise Time | tr | VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω | 3.3 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω | 15.8 | ns | ||
| Fall Time | tf | VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω | 3.2 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-AO4840-ES_C19725082.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
