Power management P Channel Trench Power MOSFET FM TC840 with low on resistance and rugged construction

Key Attributes
Model Number: TC840
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
28mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
68pF
Output Capacitance(Coss):
139pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
662pF
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
TC840
Package:
SOT-23
Product Description

Product Overview

The TC840 is a P-Channel Trench Power MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It features a low on-resistance, super high dense cell design, and is reliable and rugged for various power management applications including load switching and battery protection. This MOSFET offers a drain-source voltage of -20V and a continuous drain current of -5A.

Product Attributes

  • Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
  • Product Name: TC840
  • Origin: China
  • Package: SOT23-3

Technical Specifications

Parameter Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage (VBRDSS) -20 V
Gate-Source Voltage (VGSS) ±12 V
Maximum Junction Temperature (TJ) 150 C
Storage Temperature Range (TSTG) -55 150 C
Diode Continuous Forward Current (IS) TA=25C -1 A
Pulse Drain Current (IDP) Mounted on Large Heat Sink, 300s Pulse -20 A
Continuous Drain Current (ID) VGS=-4.5V, TA=25C -5 A
Continuous Drain Current (ID) VGS=-4.5V, TA=70C -4 A
Maximum Power Dissipation (PD) TA=25C 1.3 W
Maximum Power Dissipation (PD) TA=70C 0.8 W
Thermal Resistance-Junction to Ambient (RJA) 100 C/W
Electrical Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, IDS=-250µA -20 V
Zero Gate Voltage Drain Current (IDSS) VDS=-20V, VGS=0V -1 µA
Zero Gate Voltage Drain Current (IDSS) VDS=-20V, VGS=0V, TJ=125°C -30 µA
Gate Threshold Voltage (VGS(th)) VDS=VGS, IDS=-250µA -0.4 -0.7 -1.0 V
Gate Leakage Current (IGSS) VGS=±12V, VDS=0V ±100 nA
Drain-Source On-state Resistance (RDS(on)) VGS=-4.5V, IDS=-5A 22 28
Drain-Source On-state Resistance (RDS(on)) VGS=-2.5V, IDS=-4A 26 34
Diode Forward Voltage (VDS) ISD=-1A, VGS=0V -1.2 V
Reverse Recovery Time (trr) ISD=-5A, dlSD/dt=100A/µs 18 ns
Reverse Recovery Charge (Qrr) 25 nC
Gate Resistance (RG) VGS=0V, VDS=0V, F=1MHz 0.89 Ω
Input Capacitance (Ciss) VGS=0V, VDS=-10V, Frequency=1.0MHz 662 pF
Output Capacitance (Coss) 139 pF
Reverse Transfer Capacitance (Crss) 68 pF
Turn-on Delay Time (td(on)) VDD=-10V, RL=3.8Ω, IDS=-5A, VGND=-4.5V, RG=6Ω 11 ns
Turn-on Rise Time (tr) 18 ns
Turn-off Delay Time (td(off)) 46 ns
Turn-off Fall Time (tf) 22 ns
Total Gate Charge (Qg) VDS=-16V, VGS=-10V, IDS=-5A 12 nC
Gate-Source Charge (Qgs)
Gate-Drain Charge (Qgd) 4

2410010301_FM-TC840_C2932000.pdf

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