Power management P Channel Trench Power MOSFET FM TC840 with low on resistance and rugged construction
Product Overview
The TC840 is a P-Channel Trench Power MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It features a low on-resistance, super high dense cell design, and is reliable and rugged for various power management applications including load switching and battery protection. This MOSFET offers a drain-source voltage of -20V and a continuous drain current of -5A.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
- Product Name: TC840
- Origin: China
- Package: SOT23-3
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VBRDSS) | -20 | V | |||
| Gate-Source Voltage (VGSS) | ±12 | V | |||
| Maximum Junction Temperature (TJ) | 150 | C | |||
| Storage Temperature Range (TSTG) | -55 | 150 | C | ||
| Diode Continuous Forward Current (IS) | TA=25C | -1 | A | ||
| Pulse Drain Current (IDP) | Mounted on Large Heat Sink, 300s Pulse | -20 | A | ||
| Continuous Drain Current (ID) | VGS=-4.5V, TA=25C | -5 | A | ||
| Continuous Drain Current (ID) | VGS=-4.5V, TA=70C | -4 | A | ||
| Maximum Power Dissipation (PD) | TA=25C | 1.3 | W | ||
| Maximum Power Dissipation (PD) | TA=70C | 0.8 | W | ||
| Thermal Resistance-Junction to Ambient (RJA) | 100 | C/W | |||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=-250µA | -20 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-20V, VGS=0V | -1 | µA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-20V, VGS=0V, TJ=125°C | -30 | µA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250µA | -0.4 | -0.7 | -1.0 | V |
| Gate Leakage Current (IGSS) | VGS=±12V, VDS=0V | ±100 | nA | ||
| Drain-Source On-state Resistance (RDS(on)) | VGS=-4.5V, IDS=-5A | 22 | 28 | mΩ | |
| Drain-Source On-state Resistance (RDS(on)) | VGS=-2.5V, IDS=-4A | 26 | 34 | mΩ | |
| Diode Forward Voltage (VDS) | ISD=-1A, VGS=0V | -1.2 | V | ||
| Reverse Recovery Time (trr) | ISD=-5A, dlSD/dt=100A/µs | 18 | ns | ||
| Reverse Recovery Charge (Qrr) | 25 | nC | |||
| Gate Resistance (RG) | VGS=0V, VDS=0V, F=1MHz | 0.89 | Ω | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=-10V, Frequency=1.0MHz | 662 | pF | ||
| Output Capacitance (Coss) | 139 | pF | |||
| Reverse Transfer Capacitance (Crss) | 68 | pF | |||
| Turn-on Delay Time (td(on)) | VDD=-10V, RL=3.8Ω, IDS=-5A, VGND=-4.5V, RG=6Ω | 11 | ns | ||
| Turn-on Rise Time (tr) | 18 | ns | |||
| Turn-off Delay Time (td(off)) | 46 | ns | |||
| Turn-off Fall Time (tf) | 22 | ns | |||
| Total Gate Charge (Qg) | VDS=-16V, VGS=-10V, IDS=-5A | 12 | nC | ||
| Gate-Source Charge (Qgs) | |||||
| Gate-Drain Charge (Qgd) | 4 | ||||
2410010301_FM-TC840_C2932000.pdf
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