Power MOSFET FM 3090K Featuring N Channel Trench Technology for PWM Load Switch and Power Management
Key Attributes
Model Number:
3090K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
4mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
240pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.98nF@15V
Pd - Power Dissipation:
84W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
3090K
Package:
TO-252
Product Description
Product Overview
The 3090K is an N-Channel Trench Power MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for a wide variety of applications including PWM applications, load switches, and power management, offering high power and current handling capability.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
- Product Code: 3090K
- Package: TO-252 (DPAK)
- Certifications: 100% UIS TESTED!, 100% Vds TESTED!
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | VGS=0V | 30 | V | ||
| VGS | VDS=0V | 20 | V | |||
| ID (Tc=25) | 90 | A | ||||
| ID (Tc=100) | 60 | A | ||||
| IDM (pluse) | Current-Pulsed | 344 | A | |||
| PD (Tc=25) | 84 | W | ||||
| PD (Tc=100) | 42 | W | ||||
| Electrical Characteristics | BVDSS | VGS=0V, ID=250A | 30 | V | ||
| IDSS | VDS=30V,VGS=0V | 1 | A | |||
| IGSS | VGS=20V,VDS=0V | 100 | nA | |||
| VGS(th) | VDS=VGS,ID=250A | 1.0 | 1.5 | 2.5 | V | |
| RDS(ON) | VGS=10V, ID=20A | 4.0 | 5 | m | ||
| RDS(ON) | VGS=4.5V, ID=20A | 5.8 | 9.5 | m | ||
| Dynamic Characteristics | Ciss | VDS=15V,VGS=0V, f=1.0MHz | 1980 | pF | ||
| Coss | 320 | pF | ||||
| Crss | 240 | pF | ||||
| Switching Times | td(on) | VGS=10V, VDS=15V, RL=0.75,RGEN=3 | 12 | nS | ||
| tr | 36 | nS | ||||
| td(off) | 49 | nS | ||||
| tf | 12 | nS | ||||
| Source-Drain Diode Characteristics | ISD | 90 | A | |||
| VSD | VGS=0V,IS=20A | 1.2 | V |
2410010301_FM-3090K_C841304.pdf
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