Power management component ElecSuper ESJAB35P03 P Channel MOSFET with halogen free and Pb free design
Key Attributes
Model Number:
ESJAB35P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
31A
RDS(on):
13mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
145pF@15V
Input Capacitance(Ciss):
1.23nF@15V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
26.4nC@10V
Mfr. Part #:
ESJAB35P03
Package:
PDFN3x3-8L
Product Description
Product Overview
The ESJAB35P03 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction. This product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=25V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-8A | 13 | 20 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 17 | 27 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V VDS =-15V f=1MHz | 1230 | pF | ||
| Output Capacitance | COSS | VGS=0V VDS =-15V f=1MHz | 160 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V VDS =-15V f=1MHz | 145 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V VDS=-15V ID =-10A | 26.4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V VDS=-15V ID =-10A | 6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V VDS=-15V ID =-10A | 4.3 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V VDS=-15V RL=1 RG=3 | 18 | ns | ||
| Rise Time | tr | VGS=-10V VDS=-15V RL=1 RG=3 | 22 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V VDS=-15V RL=1 RG=3 | 55 | ns | ||
| Fall Time | tf | VGS=-10V VDS=-15V RL=1 RG=3 | 42 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-10A | -1.5 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | 25 | V | |||
| Continuous Drain Current | ID | TC=25C | -31 | A | ||
| Continuous Drain Current | ID | TC=75C | -24 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 30 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 18 | W | ||
| Pulsed Drain Current | IDM | -124 | A | |||
| Avalanche Current, Single Pulsed | IAS | -20 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 60 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | to | +150 | C | |
| Single Operation | ||||||
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 40 | C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 4.2 | C/W | ||
2504101957_ElecSuper-ESJAB35P03_C42420782.pdf
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