P Channel MOSFET ElecSuper WST4041 ES Featuring Low Gate Charge Suitable for DC DC Conversion Circuits
Key Attributes
Model Number:
WST4041-ES
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V;88mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Output Capacitance(Coss):
37pF
Input Capacitance(Ciss):
316pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
WST4041-ES
Package:
SOT-23
Product Description
Product Overview
The WST4041-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: WST4041-ES
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -3.0 | A | ||
| Continuous Drain Current | ID | TA=100°C | -1.9 | A | ||
| Maximum Power Dissipation | PD | 1.3 | W | |||
| Pulsed Drain Current | IDM | -12.0 | A | |||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | (t ≤ 10s) | 95 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-1.2A | 65 | 85 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-1A | 88 | 111 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-20V f=1MHz | 316 | pF | ||
| Output Capacitance | COSS | 37 | pF | |||
| Reverse Transfer Capacitance | CRSS | 31 | pF | |||
| Total Gate Charge | QG | VGS=0 to -10V, VDS=-20V, ID =-1.2A | 8 | nC | ||
| Gate-to-Source Charge | QGS | 1.5 | nC | |||
| Gate-to-Drain Charge | QGD | 1.7 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-20V ID=-1.2A, RG=6Ω | 6 | ns | ||
| Rise Time | tr | 5 | ns | |||
| Turn-Off Delay Time | td(OFF) | 26 | ns | |||
| Fall Time | tf | 15 | ns | |||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-1.5A | -1.2 | V | ||
2504101957_ElecSuper-WST4041-ES_C39832220.pdf
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