ElecSuper AO4443 ES N channel MOSFET with UL 94V 0 flammability rating and power management features
Key Attributes
Model Number:
AO4443-ES
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
38mΩ@10V;48mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.55V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Output Capacitance(Coss):
140pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
660pF
Gate Charge(Qg):
13.5nC@10V
Mfr. Part #:
AO4443-ES
Package:
SOP8
Product Description
Product Overview
The AO4443-ES is an N-channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for applications such as PWM, load switching, power management in portable/desktop PCs, and DC/DC conversion. Its high-density cell design contributes to low RDS(on), and it features fast switching, avalanche rating, and low leakage current.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-40V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.55 | -2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=-5A | 38 | 52 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 48 | 64 | m | |
| Forward Transconductance | gFS | VDS=-5V, ID=-5A | 40 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-20V f=1MHz | 660 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-20V f=1MHz | 140 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-20V f=1MHz | 65 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-20V ID =-5A | 13.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-20V ID =-5A | 2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-20V ID =-5A | 4 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-20V RL=4, RG=3 | 7.5 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-20V RL=4, RG=3 | 6.6 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-20V RL=4, RG=3 | 26 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-20V RL=4, RG=3 | 11.5 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -0.45 | -1.2 | V | |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | -5.0 | A | ||
| Continuous Drain Current | ID | TA=75C | -3.9 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 2 | W | ||
| Maximum Power Dissipation | PD | TA=75C | 1.2 | W | ||
| Pulsed Drain Current | IDM | -15.5 | A | |||
| Avalanche Current, Single Pulsed | IAS | 36 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 216 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10s | 48 | 62.5 | C/W | |
| Junction-to-Lead Thermal Resistance | RJL | 35 | 50 | C/W | ||
2504101957_ElecSuper-AO4443-ES_C19725083.pdf
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