N Channel MOSFET ElecSuper ES3134KE Designed for Charging Circuits and DC DC Conversion Power Switch
Key Attributes
Model Number:
ES3134KE
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
RDS(on):
180mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
220mW
Input Capacitance(Ciss):
56pF
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
ES3134KE
Package:
DFN1006-3
Product Description
Product Overview
The ES3134KE is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 0.7 | A | ||
| Continuous Drain Current | ID | TA=75°C | 0.54 | A | ||
| Maximum Power Dissipation | PD | 0.22 | W | |||
| Pulsed Drain Current | IDM | 2.8 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤10s | 556 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.35 | 0.75 | 1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.6A | 180 | 300 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=0.5A | 260 | 350 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=1.8V, ID=0.2A | 415 | 700 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 56 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 20 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 2.5 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.5A | 1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.5A | 0.28 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.5A | 0.22 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=3Ω | 2 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=0.5A, RG=3Ω | 18.8 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=0.5A, RG=3Ω | 10 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=0.5A, RG=3Ω | 25 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.7A | 1.5 | V | ||
2504101957_ElecSuper-ES3134KE_C7527979.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
