Low reverse current fast switching diode FUXINSEMI BAS516 designed for surface mount and automatic insertion
Key Attributes
Model Number:
BAS516
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
100V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
BAS516
Package:
SOD-523(SC-79)
Product Description
Product Overview
The BAS516 is a fast switching diode designed for surface mount applications, ideally suited for automatic insertion. It features a small package, low reverse current, and fast switching speed, making it suitable for various electronic circuits requiring efficient signal processing.
Product Attributes
- Brand: FUXIN SEMI
- Package Type: SOD-523
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |||
| Peak Repetitive Reverse Voltage | VRRM | 75 | V | |||
| Working Peak Reverse Voltage | VRWM | 75 | V | |||
| RMS Reverse Voltage | VR(RMS) | 53 | V | |||
| Average Rectified Output Current | IO | (Ta=25 unless otherwise noted) | 250 | mA | ||
| Power Dissipation | PD | (Ta=25 unless otherwise noted) | 150 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Reverse voltage breakdown | V(BR) | IR=100A | 75 | V | ||
| Reverse current | IR | VR=25V | 30 | nA | ||
| Reverse current | IR | VR=75V | 1 | A | ||
| Forward voltage | VF | IF=1mA | 0.715 | V | ||
| Forward voltage | VF | IF=10mA | 0.855 | V | ||
| Forward voltage | VF | IF=50mA | 1 | V | ||
| Forward voltage | VF | IF=150mA | 1.25 | V | ||
| Total capacitance | Ctot | VR=0V,f=1MHz | 1 | pF | ||
| Reverse recovery time | trr | IF= IR =10mA, Irr=0.1*IR,RL=100 | 4 | ns | ||
| Non-repetitive Peak Forward Surge Current | IFSM | @t=8.3ms | 2.0 | A |
Package Outline Dimensions (SOD-523)
| Dimension | Min (mm) | Max (mm) | Min (in) | Max (in) |
|---|---|---|---|---|
| A | 0.510 | 0.770 | 0.020 | 0.031 |
| A1 | 0.500 | 0.700 | 0.020 | 0.028 |
| b | 0.250 | 0.350 | 0.010 | 0.014 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 0.750 | 0.850 | 0.030 | 0.033 |
| E | 1.100 | 1.300 | 0.043 | 0.051 |
| E1 | 1.500 | 1.700 | 0.059 | 0.067 |
| E2 | ||||
| L | 0.010 | 0.070 | 0.001 | 0.003 |
| REF | 7 | 7 | 0.200 | 0.008 |
Suggested Pad Layout
(Diagram not available in text format)
2209201730_FUXINSEMI-BAS516_C5178954.pdf
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