Power Switching N Channel MOSFET ElecSuper FSS2302S ES with Low Gate Charge and Halogen Free Material

Key Attributes
Model Number: FSS2302S-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
36mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
88pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
311pF@10V
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
4.1nC@4.5V
Mfr. Part #:
FSS2302S-ES
Package:
SOT-23
Product Description

Product Overview

The FSS2302S-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and halogen-free.

Product Attributes

  • Brand: ElecSuper
  • Model: FSS2302S-ES
  • Package: SOT-23
  • Material: Halogen free
  • Certifications: UL 94V-0
  • ESD Protected

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
Drain-Source VoltageBVDSS20V
Gate-Source VoltageVGS±12V
Continuous Drain CurrentIDTA=253.3A
Continuous Drain CurrentIDTA=1002.1A
Maximum Power DissipationPD0.9mW
Pulsed Drain CurrentIDM13.2A
Operating Junction TemperatureTJ150C
Lead TemperatureTL260C
Storage Temperature RangeTstg-55150C
Junction-to-Ambient Thermal ResistanceRJASingle Operation138C/W
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA20V
Zero Gate Voltage Drain CurrentIDSSVDS=20V, VGS=0V1.0uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±12V±100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA0.40.71.0V
Drain-to-source On-resistanceRDS(on)VGS=4.5V, ID=3A4555m
Drain-to-source On-resistanceRDS(on)VGS=2.5V, ID=2A6285m
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=10V200pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS=10V35pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS=10V28pF
Total Gate ChargeQG(TOT)VGS=4.5V, VDS=10V, ID=2A3nC
Gate-to-Source ChargeQGSVGS=4.5V, VDS=10V, ID=2A0.5nC
Gate-to-Drain ChargeQGDVGS=4.5V, VDS=10V, ID=2A0.7nC
Turn-On Delay Timetd(ON)VGS=4.5V, VDS=10V, ID=2A, RG=33ns
Rise TimetrVGS=4.5V, VDS=10V, ID=2A, RG=311ns
Turn-Off Delay Timetd(OFF)VGS=4.5V, VDS=10V, ID=2A, RG=320ns
Fall TimetfVGS=4.5V, VDS=10V, ID=2A, RG=38ns
Forward VoltageVSDVGS=0V, IS=3A1.5V

2504101957_ElecSuper-FSS2302S-ES_C5224183.pdf

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