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quality Fast Switching 40V N Channel MOSFET FETek FKBA4094 Suitable for Telecom and Industrial Applications factory
quality Fast Switching 40V N Channel MOSFET FETek FKBA4094 Suitable for Telecom and Industrial Applications factory

Fast Switching 40V N Channel MOSFET FETek FKBA4094 Suitable for Telecom and Industrial Applications

Key Attributes
Model Number: FKBA4094
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
114A
RDS(on):
3.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
71pF
Number:
1 N-channel
Output Capacitance(Coss):
899pF
Input Capacitance(Ciss):
2.648nF
Pd - Power Dissipation:
73.5W
Gate Charge(Qg):
22.7nC@4.5V
Mfr. Part #:
FKBA4094
Package:
PDFN-8(5x6)
Product Description

FKBA4094 N-Ch 40V Fast Switching MOSFETs

The FKBA4094 is an N-channel, 40V fast switching MOSFET designed for power management applications. It features advanced trench MOS technology, low gate charge, and low RDS(ON), making it suitable for DC/DC converters in desktop computers, telecom, and industrial environments. This device is 100% EAS guaranteed and available in a green package.

Product Attributes

  • Brand: FETek Technology Corp.
  • Product Code: FKBA4094
  • Type: N-Channel MOSFET
  • Voltage Rating: 40V
  • Switching Speed: Fast

Technical Specifications

mJ A W V m m V uA uA nA nC pF A V
Symbol Parameter Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 114 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 72 A
IDM Pulsed Drain Current 240 A
EAS Single Pulse Avalanche Energy 145
IAS Avalanche Current 54
PD@TC=25 Total Power Dissipation 73.5
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-Ambient --- 55 /W
RJC Thermal Resistance Junction-Case --- 1.7 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- ---
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 2.5 3.2
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=15A --- 3.8 5.3
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.7 2.2
IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25 --- --- 1
IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=55 --- --- 5
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100
gfs Forward Transconductance VDS=5V , ID=20A --- 75 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 ---
Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=20A --- 22.7 ---
Qgs Gate-Source Charge --- 7.5 ---
Qgd Gate-Drain Charge --- 5.5 ---
Td(on) Turn-On Delay Time VDD=20V , VGS=10V , RG=3 ID=20A --- 10 --- ns
Tr Rise Time --- 5 ---
Td(off) Turn-Off Delay Time --- 33 ---
Tf Fall Time --- 6.5 ---
Ciss Input Capacitance VDS=20V , VGS=0V , f=1MHz --- 2648 ---
Coss Output Capacitance --- 899 ---
Crss Reverse Transfer Capacitance --- 71 ---
IS Continuous Source Current VG=VD=0V , Force Current --- --- 30
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1

2410121606_FETek-FKBA4094_C2926956.pdf

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