600V N channel Power MOSFET Fortior Tech FMD7N60E5 with Low Gate Charge and Fast Body Diode Features
Key Attributes
Model Number:
FMD7N60E5
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
RDS(on):
1.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
84pF
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
FMD7N60E5
Package:
TO-252T
Product Description
Product Overview
The FMD7N60E5 is an N-channel Power MOSFET designed for high-efficiency applications. Its features include a fast body diode for ZVS applications, lower gate charge for simpler drive requirements, and a higher gate voltage threshold for improved noise immunity. This MOSFET offers low on-resistance and is RoHS compliant, making it suitable for motor control, uninterruptible power supplies, and zero voltage switching SMPS.
Product Attributes
- Brand: Fortior Technology
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 600 | V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/Tj | ID=250uA, Referenced to 25C | 0.6 | V/C | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250mA | 2 | 4 | V | |
| Drain-source Leakage Current | IDSS | VDS =600V,VGS =0V, Tj=25C | 1 | mA | ||
| Drain-source Leakage Current | IDSS | VDS =480V,VGS =0V, Tj=125C | 100 | mA | ||
| Forward Transconductance | gfs | VDS =15V, ID=3.5A | 7 | S | ||
| Gate-body Leakage Current | IGSS | VDS =0V,VGS =30V | 100 | nA | ||
| Drain-source On Resistance | RDS(ON) | VGS =10V, ID=3.5A | 1.1 | 1.5 | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V F = 1.0MHZ | 1050 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 25V F = 1.0MHZ | 84 | pF | ||
| Reverse transfer Capacitance | Crss | VGS = 0V, VDS = 25V F = 1.0MHZ | 12 | pF | ||
| Turn-on Delay Time | Td(on) | VDD=300V, ID =7.0A RG=25 | 17 | ns | ||
| Rise Time | Tr | VDD=300V, ID =7.0A RG=25 | 20 | ns | ||
| Turn -Off Delay Time | Td(off) | VDD=300V, ID =7.0A RG=25 | 39 | ns | ||
| Fall Time | Tf | VDD=300V, ID =7.0A RG=25 | 18 | ns | ||
| Total Gate Charge | Qg | ID =7.0A, VDS = 480V VGS = 10V | 21 | nC | ||
| Gate-to-Source Charge | Qgs | ID =7.0A, VDS = 480V VGS = 10V | 4.8 | nC | ||
| Gate-to-Drain Charge | Qg d | ID =7.0A, VDS = 480V VGS = 10V | 6.5 | nC | ||
| Continuous Diode Forward Current | IS | 7 | A | |||
| Max Pulsed Diode Forward Current | ISM | 28 | A | |||
| Diode Forward Voltage | VSD | Tj=25C, Is=7.0A,VGS =0V | 1.4 | V | ||
| Reverse Recovery Time | trr | Tj=25C, If=7.0A di/dt=100A/s | 198 | ns | ||
| Reverse Recovery Charge | Qrr | Tj=25C, If=7.0A di/dt=100A/s | 0.5 | uC | ||
| Junction-case Thermal Resistance | RthJC | 1.3 | /W | |||
| Junction-ambient Thermal Resistance | RthJA | 62.5 | /W |
2411011654_Fortior-Tech-FMD7N60E5_C5126653.pdf
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