ElecSuper FDG6316P ES MOSFET P Channel type optimized for power switching and DC DC conversion tasks
Key Attributes
Model Number:
FDG6316P-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
82mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
185pF
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
2.2nC@4.5V
Mfr. Part #:
FDG6316P-ES
Package:
SOT23-6L
Product Description
Product Overview
The FDG6316P-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction with avalanche rating and low leakage current.
Product Attributes
- Brand: SuperMOS
- Part Number: FDG6316P-ES
- Package: SOT23-6L
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Packing: Tape & Reel, 3,000 PCS per reel
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | -2 | A | ||
| Continuous Drain Current | ID | TA=100°C | -1.3 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 0.8 | W | ||
| Pulsed Drain Current | IDM | -8 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | (t ≤ 10s) | 156 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-2A | 82 | 95 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-1.5A | 118 | 138 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-1.8V, ID=-1A | 180 | 210 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-10V, f=1MHz | 185 | pF | ||
| Output Capacitance | COSS | 35 | pF | |||
| Reverse Transfer Capacitance | CRSS | 25 | pF | |||
| Total Gate Charge | QG | VGS=-4.5V, VDS=-10V, ID =-2A | 2.2 | nC | ||
| Gate-to-Source Charge | QGS | 0.5 | ||||
| Gate-to-Drain Charge | QGD | 0.5 | ||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V, RL=5Ω, RG=3Ω | 10 | ns | ||
| Rise Time | tr | 30 | ||||
| Turn-Off Delay Time | td(OFF) | 62 | ||||
| Fall Time | tf | 50 | ||||
| Forward Voltage | VSD | VGS=0V, IS=-2A | -1.5 | V | ||
2504101957_ElecSuper-FDG6316P-ES_C22464631.pdf
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