Synchronous Buck Converter N Channel MOSFET FETek FKD3006 with RoHS and Green Product Certification
Key Attributes
Model Number:
FKD3006
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
-
Output Capacitance(Coss):
267pF
Input Capacitance(Ciss):
2.295nF
Pd - Power Dissipation:
53W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
FKD3006
Package:
TO-252-2
Product Description
Product Overview
The FKD3006 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed and approved for full function reliability.
Product Attributes
- Brand: FETek Technology Corp.
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units | |
| VDS | Drain-Source Voltage | 30 | V | ||||
| VGS | Gate-Source Voltage | 20 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 80 | A | ||||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 57 | A | ||||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 27 | 17 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 23 | 14.5 | A | |||
| IDM | Pulsed Drain Current | 160 | A | ||||
| EAS | Single Pulse Avalanche Energy | 115.2 | mJ | ||||
| IAS | Avalanche Current | 48 | A | ||||
| PD@TC=25 | Total Power Dissipation | 53 | W | ||||
| PD@TA=25 | Total Power Dissipation | 6 | 2.4 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | ||||
| TJ | Operating Junction Temperature Range | -55 | 175 | ||||
| RJA | Thermal Resistance Junction-ambient (Steady State) | 62 | /W | ||||
| RJA | Thermal Resistance Junction-Ambient (t 10s) | 25 | /W | ||||
| RJC | Thermal Resistance Junction-Case | 2.8 | /W | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | |||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=30A | 4.7 | 5.5 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=15A | 7.5 | 9 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | |||
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=15A | 20 | nC | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 2295 | pF | |||
| Coss | Output Capacitance | 267 | pF | ||||
| Crss | Reverse Transfer Capacitance | 210 | pF | ||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 80 | A | |||
| ISM | Pulsed Source Current | 160 | A | ||||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1 | V | |||
| trr | Reverse Recovery Time | IF=30A , dI/dt=100A/s , TJ=25 | 14 | nS | |||
| qrr | Reverse Recovery Charge | 5 | nC |
2411220620_FETek-FKD3006_C2758594.pdf
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