High Current Drain N Channel Trench MOSFET FM 055N85 Ideal for E Bike Controller and High Frequency Circuit
Key Attributes
Model Number:
055N85
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
256pF
Number:
1 N-channel
Output Capacitance(Coss):
482pF
Pd - Power Dissipation:
202W
Input Capacitance(Ciss):
5.56nF
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
055N85
Package:
TO-263
Product Description
Product Overview
The 055N85 is an N-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It is specifically designed for E-Bike controller applications, offering ultra-low on-resistance and high UIS (Unity Inverse Series) capabilities with 100% testing. This MOSFET is suitable for 64V E-Bike controllers, hard-switched, and high-frequency circuits, as well as Uninterruptible Power Supply systems.
Product Attributes
- Brand: Fine Made Microelectronics Group Co., Ltd.
- Product Code: 055N85
- Document Number: S&CIC2013
- Version: 1.0
- Year: 2021
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage (VGS=0V) | 85 | V | |||
| VGS | Gate-Source Voltage (VDS=0V) | 20 | V | |||
| ID (DC) | Drain Current (DC) at Tc=25 | 110 | A | |||
| ID (DC) | Drain Current (DC) at Tc=100 | 78 | A | |||
| IDM (pluse) | Drain Current-Continuous@ Current-Pulsed (Note 1) | 420 | A | |||
| dv/dt | Peak Diode Recovery Voltage | 7.2 | V/ns | |||
| PD | Maximum Power Dissipation(Tc=25) | 202 | W | |||
| Derating Factor | 1.46 | W/ | ||||
| EAS | Single Pulse Avalanche Energy (Note 2) | TJ=25,VDD=40V,VBG B=10V,RG=25L=0.5mH | 528 | mJ | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 175 | |||
| Thermal Characteristic | ||||||
| RJC | Thermal Resistance,Junction-to-Case | 0.8 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 85 | V | ||
| IDSS | Zero Gate Voltage Drain Current(Tc=25) | VDS=85V,VGS=0V | 1 | A | ||
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250A | 2 | 4 | V | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=40A | 5.5 | 6.8 | m | |
| Dynamic Characteristics | ||||||
| gFS | Forward Transconductance | VDS=10V,ID=15A | 25 | S | ||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 5560 | PF | ||
| Coss | Output Capacitance | 482 | PF | |||
| Crss | Reverse Transfer Capacitance | 256 | PF | |||
| Qg | Total Gate Charge | VDS=50V,ID=40A, VGS=10V | 152 | nC | ||
| Qgs | Gate-Source Charge | 32 | nC | |||
| Qgd | Gate-Drain Charge | 61 | nC | |||
| Switching Times | ||||||
| td(on) | Turn-on Delay Time | VDD=30V,ID=40A,RL=15 VGS=10V,RG=2.5 | 35 | nS | ||
| tr | Turn-on Rise Time | 52 | nS | |||
| td(off) | Turn-Off Delay Time | 76 | nS | |||
| tf | Turn-Off Fall Time | 21 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| ISD | Source-drain Current(Body Diode) | 110 | A | |||
| ISDM | Pulsed Source-Drain Current(Body Diode) | 420 | A | |||
| VSD | Forward On Voltage (Note 1) | TJ=25,ISD=40A,VGS=0V | 0.87 | 0.99 | V | |
| trr | Reverse Recovery Time (Note 1) | TJ=25,IF=75A di/dt=100A/s | 38 | nS | ||
| Qrr | Reverse Recovery Charge (Note 1) | 69 | nC | |||
| ton | Forward Turn-on Time | Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) | ||||
2410121956_FM-055N85_C2932024.pdf
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