Surface Mount Fast Recovery Rectifier FUXINSEMI SOD1F7 1 Ampere High Speed Switching Device

Key Attributes
Model Number: SOD1F7
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@4V
Reverse Recovery Time (trr):
500ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1kV
Diode Configuration:
1 Independent
Voltage - Forward(Vf@If):
1.3V@1A
Current - Rectified:
1A
Mfr. Part #:
SOD1F7
Package:
SOD-123
Product Description

Product Overview

The Fuxinsemi SOD1F1 through SOD1F7 series are 1.0A Surface Mount Fast Recovery Rectifiers designed for high-speed switching applications. These rectifiers feature a glass-passivated chip junction, low reverse leakage, built-in strain relief for automated placement, and high forward surge current capability. They are ideal for applications requiring efficient and reliable rectification with fast recovery times.

Product Attributes

  • Brand: Fuxinsemi
  • Case: JEDEC SOD-123 molded plastic body
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Color band denotes cathode end
  • Mounting Position: Any
  • Flammability Classification: Underwriters Laboratory 94V-0
  • Features: Low reverse leakage, built-in strain relief, high forward surge current capability, high temperature soldering guaranteed (260 C/10 seconds at terminals)

Technical Specifications

PARAMETER SYMBOLS UNITS SOD1F1 SOD1F2 SOD1F3 SOD1F4 SOD1F5 SOD1F6 SOD1F7
Maximum repetitive peak reverse voltage VRRM V 50 100 140 200 280 400 600
Maximum RMS voltage VRMS V 35 70 100 140 200 280 420
Maximum DC blocking voltage VDC V 50 100 140 200 280 400 600
Maximum average forward rectified current (0.375 (9.5mm) lead length at TA=75 C) I(AV) A 1.0
Peak forward surge current (8.3ms single half sine-wave superimposed on rated load (JEDEC Method)) IFSM A 30
Maximum instantaneous forward voltage at 1.0A VF V 1.0
Maximum DC reverse current TA=25 C at rated DC blocking voltage IR A 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Maximum DC reverse current TA=100 C at rated DC blocking voltage IR mA 0.05 0.05 0.05 0.05 0.05 0.05 0.05
Typical thermal resistance (NOTE 3) RJA C/W 85.0
Typical junction capacitance (NOTE 2) CJ pF 15.0
Maximum reverse recovery time (NOTE 1) trr ns 150 250 500 500 500 500 500
Operating junction and storage temperature range TJ,TSTG C -55 to +150

Notes:
1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375 (9.5mm) lead length, P.C.B. mounted

Package Dimensions (SOD-123)

Dimension Inches (Millimeters)
Length 2.70.2 (69.05.0)
Width 1.80.2 (46.05.0)
Height 1.00.2 (25.05.0)
Lead Bend 0.60.25 (15.06.3)
Lead Spread 3.70.2 (94.05.0)
Flat Spring 1.10.25 (28.06.3)
Flat Spring 0.10-0.30 (2.5-7.6)

Marking Information

Type Number Marking Code
SOD1F1 F1
SOD1F2 F2
SOD1F3 F3
SOD1F4 F4
SOD1F5 F5
SOD1F6 F6
SOD1F7 F7

Soldering Profile

Reflow soldering

Profile Feature Parameter Value Unit
Storage environment Temperature 5 ~ 40 C
Storage environment Humidity 55 25 %
Preheat Tsmin 150 C
Preheat Tsmax 200 C
Preheat ts 60~120 sec
Average ramp-up rate (Tsmax to TL) < 3 C/sec
Time maintained above TL TL 217 C
Time maintained above TL tL 60~260 sec
Peak Temperature TP 255 0 / +5 C
Time within 5C of actual peak temperature tp 10~30 sec
Ramp-down Rate < 6 C/sec
Time 25C to Peak Temperature < 6 minutes

2309041613_FUXINSEMI-SOD1F7_C7503105.pdf

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