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quality General purpose switching diode FUXINSEMI 1SS181 with Pb e3 RoHS compliance and SOT23 compact package factory
quality General purpose switching diode FUXINSEMI 1SS181 with Pb e3 RoHS compliance and SOT23 compact package factory

General purpose switching diode FUXINSEMI 1SS181 with Pb e3 RoHS compliance and SOT23 compact package

Key Attributes
Model Number: 1SS181
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
500nA@80V
Reverse Recovery Time (trr):
1.6ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Common Anode
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
920mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS181
Package:
SOT-23
Product Description

Product Overview

The 1SS181 is a switching diode designed for general-purpose applications. It features a low forward voltage and fast reverse recovery time, making it suitable for various electronic circuits. This diode is available in a compact SOT-23 package, ideal for space-constrained designs. Key characteristics include high reverse breakdown voltage and low reverse current, ensuring reliable performance in demanding conditions. The device is RoHS compliant, indicated by the 'e3' suffix.

Product Attributes

  • Brand: FUXIN SEMI
  • Model: 1SS181
  • Package: SOT-23
  • Marking: A3
  • Compliance: Pb e3 (RoHS)
  • Molding Compound: Green (if solid dot present)

Technical Specifications

Parameter Symbol Min Typ Max Unit Conditions
Maximum Ratings @Ta=25
Non-Repetitive Peak Reverse Voltage VRM 85 V
DC Blocking Voltage VR 80 V
Forward Continuous Current IFM 300 mA
Average Rectified Output Current IO 100 mA
Power Dissipation PD 150 mW
Operation Junction and Storage Temperature Range TJ, TSTG -55 +150
Forward Surge Current @t=8.3ms IFSM 2.0 A Non-Repetitive Peak
Electrical Characteristics @Ta=25
Reverse breakdown voltage V(BR) 80 V IR=100A
Forward voltage VF1 0.61 V IF=1mA
VF2 0.74 V IF=1mA
VF3 0.92 1.2 V IF=100mA
Reverse current IR1 0.1 uA VR=30V
IR2 0.5 uA VR=80V
Capacitance between terminals CT 2.2 4.0 pF VR=0,f=1MHz
Reverse recovery time trr 1.6 4.0 ns IF=IR=10mA,Irr=0.1IR
Thermal Resistance from Junction to Ambient
RJA 833 /W
Dimensions (SOT-23 Package)
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 0.950 TYP. 0.037 TYP.
e1 1.800 - 2.000 0.071 - 0.079
L 0.550 REF. 0.022 REF.
L1 0.300 - 0.500 0.012 - 0.020

2108072030_FUXINSEMI-1SS181_C2844161.pdf

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