N Channel MOSFET ElecSuper BSS138KA with High Density Cell Design and UL 94V 0 Flammability Rating

Key Attributes
Model Number: BSS138KA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
1.3pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
15pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.6nC@4.5V
Mfr. Part #:
BSS138KA
Package:
SOT23-3L
Product Description

Product Overview

The BSS138KA is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering features like 60V BVDSS, low RDS(ON), high density cell design, and avalanche rating. This standard product is Pb-free and halogen-free.

Product Attributes

  • Brand: SuperMOS (ElecSuper)
  • Package: SOT23-3L
  • Material: Halogen free
  • Flammability Rating: UL 94V-0
  • Certifications: Pb-free

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Absolute Maximum Rating & Thermal Characteristics
Drain-Source Voltage BVDSS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 0.40 A
Maximum Power Dissipation PD 417 mW
Pulsed Drain Current IDM a: Repetitive rating, pulse width limited by junction temperature, tp=10s, Duty Cycle=1% 1.60 A
Operating Junction Temperature TJ 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55 to 150 °C
Junction-to-Ambient Thermal Resistance RθJA Single Operation 300 °C/W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=10mA 60 V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V,TJ=25 1.0 uA
VDS=40V, VGS=0V, TJ=125 100 uA
Gate-to-source Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA
Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250uA 0.8 1.0 1.5 V
Drain-to-source On-resistance RDS(on) VGS=10V, ID=0.4A 1.5 1.9 Ω
VGS=4.5V, ID=0.2A 1.6 2.5 Ω
VGS=2.5V, ID=0.1A 2.7 4.5 Ω
Input Capacitance CISS VGS=0V, f=1MHz, VDS =25V 25 50 pF
Output Capacitance COSS 9.7 22 pF
Reverse Transfer Capacitance CRSS 2.2 5 pF
Total Gate Charge QG(TOT) VGS=4.5V, VDS=25V, ID=0.25A 0.65 1 nC
Gate-to-Source Charge QGS 0.2
Gate-to-Drain Charge QGD 0.23
Turn-On Delay Time td(ON) VGS=10V, VDS=25V, ID=0.4A, RG=6Ω 2.3 5 ns
Rise Time tr 19.2 40 ns
Turn-Off Delay Time td(OFF) 6.3 12 ns
Fall Time tf 23 50 ns
Forward Voltage VSD VGS=0V, IS=0.5A 0.86 1.5 V

2504101957_ElecSuper-BSS138KA_C5224259.pdf

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