Switching diode FUXINSEMI BAS70-04 with 200 milliwatt power dissipation and 70 volt DC voltage rating
Key Attributes
Model Number:
BAS70-04
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70-04
Package:
SOT-23(TO-236)
Product Description
Product Overview
The Fuxinsemi BAS70/-04/-05/-06 is a series of switching diodes designed for fast switching applications. These diodes feature a low turn-on voltage and are available in a lead-free version. They are suitable for various electronic circuits requiring efficient switching performance.Product Attributes
- Brand: Fuxinsemi
- Package Type: SOT-23
- Availability: Lead-free version available
Technical Specifications
| Model | Marking | DC Voltage (VR) | Forward Continuous Current (IF) | Power Dissipation (PD) | Operating Junction Temperature (TJ) | Storage Temperature (Tstg) | Reverse Breakdown Voltage (V(BR)) | Reverse Leakage Current (IR) | Forward Voltage (VF) | Diode Capacitance (CD) | Reverse Recovery Time (trr) | Thermal Resistance Junction to Ambient (RJA) | Non-Repetitive Peak Forward Surge Current (IFSM) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAS70 | 73 | 70 V | 70 mA | 200 mW | -40 ~ +125 | -55 ~ +150 | 70 V (IR= 10A) | 100 nA (VR=50V) | 410 mV (IF=1mA) / 1000 mV (IF=15mA) | 2 pF (VR=0V, f=1MHz) | 5 ns (IF=IR=10mA, Irr=0.1xIR, RL=100) | 500 /W | 100 mA (t = 8.3ms) |
| BAS70-04 | 74 | 70 V | 70 mA | 200 mW | -40 ~ +125 | -55 ~ +150 | 70 V (IR= 10A) | 100 nA (VR=50V) | 410 mV (IF=1mA) / 1000 mV (IF=15mA) | 2 pF (VR=0V, f=1MHz) | 5 ns (IF=IR=10mA, Irr=0.1xIR, RL=100) | 500 /W | 100 mA (t = 8.3ms) |
| BAS70-05 | 75 | 70 V | 70 mA | 200 mW | -40 ~ +125 | -55 ~ +150 | 70 V (IR= 10A) | 100 nA (VR=50V) | 410 mV (IF=1mA) / 1000 mV (IF=15mA) | 2 pF (VR=0V, f=1MHz) | 5 ns (IF=IR=10mA, Irr=0.1xIR, RL=100) | 500 /W | 100 mA (t = 8.3ms) |
| BAS70-06 | 76 | 70 V | 70 mA | 200 mW | -40 ~ +125 | -55 ~ +150 | 70 V (IR= 10A) | 100 nA (VR=50V) | 410 mV (IF=1mA) / 1000 mV (IF=15mA) | 2 pF (VR=0V, f=1MHz) | 5 ns (IF=IR=10mA, Irr=0.1xIR, RL=100) | 500 /W | 100 mA (t = 8.3ms) |
| Dimensions (Millimeters) | Min. | Max. |
|---|---|---|
| A | 0.900 | 1.150 |
| A1 | 0.000 | 0.100 |
| A2 | 0.900 | 1.050 |
| b | 0.300 | 0.500 |
| c | 0.080 | 0.150 |
| D | 2.800 | 3.000 |
| E | 1.200 | 1.400 |
| E1 | 2.250 | 2.550 |
| e | 0.950 TYP. | |
| e1 | 1.800 | 2.000 |
| L | 0.550 REF. | |
| L1 | 0.300 | 0.500 |
| Dimensions (Inches) | Min. | Max. |
|---|---|---|
| A | 0.035 | 0.045 |
| A1 | 0.000 | 0.004 |
| A2 | 0.035 | 0.041 |
| b | 0.012 | 0.020 |
| c | 0.003 | 0.006 |
| D | 0.110 | 0.118 |
| E | 0.047 | 0.055 |
| E1 | 0.089 | 0.100 |
| e | 0.037 TYP. | |
| e1 | 0.071 | 0.079 |
| L | 0.022 REF. | |
| L1 | 0.012 | 0.020 |
2201121630_FUXINSEMI-BAS70-04_C2934845.pdf
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