High gain NPN transistor FUXINSEMI BC81725 in SOT23 package designed for switching and amplification

Key Attributes
Model Number: BC817-25
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC817-25
Package:
SOT-23
Product Description

Product Overview

The BC817 is a general-purpose NPN silicon transistor in a SOT-23 package. It is ideally suited for automatic insertion and features an epitaxial planar die construction. A complementary PNP type (BC807) is also available.

Product Attributes

  • Brand: Fuxin Semiconductor (implied by URL)
  • Package Type: SOT-23
  • Transistor Type: NPN Silicon
  • Complementary Type: BC807 (PNP)

Technical Specifications

SymbolParameterTest conditionsMinTypMaxUnit
VCBOCollector-base breakdown voltageIC= 10A, IE=050V
VCEOCollector-emitter breakdown voltageIC= 10mA, IB=045V
VEBOEmitter-base breakdown voltageIE= 1A, IC=05V
ICBOCollector cut-off currentVCB= 45 V , IE=00.1A
IEBOEmitter cut-off currentVEB=4V, IC=00.1A
hFEDC current gainVCE=1V, IC= 100mA100600
VCE=1V, IC= 500mA40
VCE(sat)Collector-emitter saturation voltageIC= 500mA, IB= 50mA0.7V
VBE(sat)Base-emitter saturation voltageIC= 500mA, IB= 50mA1.2V
VBEBase-emitter voltageVCE= 1 V, IC= 500mA1.2V
CobCollecter capacitanceVCB=10V ,f=1MHz10pF
fTTransition frequencyVCE= 5 V, IC= 10mA f=100MHz100MHz
PCCollector Power Dissipation(Ta=25 unless otherwise noted)300mW
RJAThermal Resistance From Junction To Ambient(Ta=25 unless otherwise noted)417/W
TJ,TstgOperation Junction and Storage Temperature Range(Ta=25 unless otherwise noted)-55+150

Product Variants (hFE Classification)

RankhFE RangeMarking
BC817-16100-2506A
BC817-25160-4006B
BC817-40250-6006C

2101141105_FUXINSEMI-BC817-25_C908259.pdf

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