NPN transistor FUXINSEMI MMBT3904LT1G designed for small signal amplification and switching circuits
Key Attributes
Model Number:
MMBT3904LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3904LT1G
Package:
SOT-23
Product Description
Product Overview
The MMBT3904LT1G is a general-purpose NPN bipolar transistor designed for a wide range of applications. Its small signal capabilities make it suitable for amplification and switching tasks in various electronic circuits.
Product Attributes
- Brand: ON Semiconductor
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Type | Polarity | Collector-Emitter Voltage (Vceo) | Collector Current (Ic) | Power Dissipation (Pd) | Gain (hFE) | Frequency (fT) |
| MMBT3904LT1G | NPN | NPN | 40V | 200mA | 350mW | 100-300 | 300MHz |
2306191402_FUXINSEMI-MMBT3904LT1G_C7422625.pdf
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