Surface Mount Schottky Barrier Rectifier FUXINSEMI SS34F with JEDEC SMAF Package and RoHS Compliance

Key Attributes
Model Number: SS34F
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
550mV@3A
Current - Rectified:
3A
Mfr. Part #:
SS34F
Package:
SMAF(DO-214AD)
Product Description

Product Overview

The Fuxinsemi SS32F through SS320F series are Surface Mount Schottky Barrier Rectifiers designed for various applications. These rectifiers feature a metal silicon junction and majority carrier conduction, offering low power loss and high efficiency. They are housed in a JEDEC SMAF molded plastic body with solder-plated terminals, suitable for automated placement and high-temperature soldering. Key advantages include high forward surge current capability and compliance with RoHS 2.0 and Halogen-free standards. Ideal for surface mounted applications, these rectifiers provide reliable performance in a compact package.

Product Attributes

  • Brand: Fuxinsemi
  • Package Type: JEDEC SMAF
  • Material: Metal silicon junction
  • Conduction Type: Majority carrier conduction
  • Certifications: RoHS 2.0 compliant, Halogen-free
  • Flammability Classification: Underwriters Laboratory 94V-0
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Mounting Position: Any
  • Polarity: Color band denotes cathode end

Technical Specifications

Parameter Symbol SS32F THRU SS320F Units SS32F SS34F SS345F SS35F SS36F SS38F SS310F SS315F SS320F
Maximum repetitive peak reverse voltage VRRM 20 to 200 V 20 40 45 50 60 80 100 150 200
Maximum RMS voltage VRMS V 14 28 32 35 42 56 70 105 140
Maximum DC blocking voltage VDC V 20 40 45 50 60 80 100 150 200
Maximum average forward rectified current at TL(see fig.1) I(AV) 3.0 A 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM A 80.0 80.0 80.0 80.0 80.0 80.0 80.0 80.0 80.0
Maximum instantaneous forward voltage at 3.0A VF V 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55
Maximum DC reverse current TA=25 C at rated DC blocking voltage IR mA 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
Maximum DC reverse current TA=100 C at rated DC blocking voltage IR mA 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0
Typical junction capacitance (NOTE 1) CJ 70 pF 70 70 70 70 70 70 70 70 70
Typical thermal resistance (NOTE 2) RJA C/W 70 70 70 70 70 70 70 70 70
Operating junction temperature range TJ, TSTG -55 to +150 C -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150
Storage temperature range TJ, TSTG -55 to +125 C -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125
Dimensions (SMAF) - Length A 0.126(3.20) - 0.141(3.60) inches (mm) 0.126(3.20) - 0.141(3.60) 0.126(3.20) - 0.141(3.60) 0.126(3.20) - 0.141(3.60) 0.126(3.20) - 0.141(3.60) 0.126(3.20) - 0.141(3.60) 0.126(3.20) - 0.141(3.60) 0.126(3.20) - 0.141(3.60) 0.126(3.20) - 0.141(3.60) 0.126(3.20) - 0.141(3.60)
Dimensions (SMAF) - Width B 0.049(1.25) - 0.065(1.65) inches (mm) 0.049(1.25) - 0.065(1.65) 0.049(1.25) - 0.065(1.65) 0.049(1.25) - 0.065(1.65) 0.049(1.25) - 0.065(1.65) 0.049(1.25) - 0.065(1.65) 0.049(1.25) - 0.065(1.65) 0.049(1.25) - 0.065(1.65) 0.049(1.25) - 0.065(1.65) 0.049(1.25) - 0.065(1.65)
Dimensions (SMAF) - Height C 0.037(0.95) - 0.049(1.25) inches (mm) 0.037(0.95) - 0.049(1.25) 0.037(0.95) - 0.049(1.25) 0.037(0.95) - 0.049(1.25) 0.037(0.95) - 0.049(1.25) 0.037(0.95) - 0.049(1.25) 0.037(0.95) - 0.049(1.25) 0.037(0.95) - 0.049(1.25) 0.037(0.95) - 0.049(1.25) 0.037(0.95) - 0.049(1.25)
Marking Code SS32 SS34 SS345 SS35 SS36 SS38 SS310 SS315 SS320

Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. P.C.B. mounted with 2.0x2.0(5.0x5.0cm) copper pad areas.


2010271836_FUXINSEMI-SS34F_C908239.pdf

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