Battery Protection and Switching MOSFET FUXINSEMI FS8205A N Channel with Low On Resistance Technology
Key Attributes
Model Number:
FS8205A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
18mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
125pF@8V
Number:
2 N-Channel
Input Capacitance(Ciss):
800pF@8V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
FS8205A
Package:
SOT-23-6L
Product Description
Product Overview
The FS8205A is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is suitable for battery protection and switching applications.
Product Attributes
- Brand: Fuxin Semiconductor
- Product Code: FS8205A
- Marking: 8205A
- Package: SOT-23-6L
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDS | 20 | V | |||
| VGS | ±12 | V | ||||
| ID | 6 | A | ||||
| IDM | 25 | A | ||||
| PD | 1.5 | W | ||||
| TJ | -55 | ~ | +150 | |||
| TSTG | -55 | ~ | +150 | |||
| Electrical Characteristics | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| IDSS | VDS =20V,VGS = 0V | 1 | µA | |||
| IGSS | VGS =±12V, VDS = 0V | ±100 | nA | |||
| VGS(th) | VDS =VGS, ID =250µA | 0.5 | 1.2 | V | ||
| RDS(on) | VGS =4.5V, ID =6.0A | 18 | 25 | mΩ | ||
| RDS(on) | VGS =2.5V, ID =5.0A | 23 | 32 | mΩ | ||
| gFS | VDS =5V, ID =7A | 9 | S | |||
| Dynamic Characteristics | Ciss | VDS =8V,VGS =0V,f =1MHz | 800 | pF | ||
| Coss | 155 | pF | ||||
| Crss | 125 | pF | ||||
| Qg | VDS =10V,VGS =4.5V,ID =4A | 11 | nC | |||
| Gate Charge | Qgs | 2.3 | nC | |||
| Qgd | 2.5 | nC | ||||
| td(on) | VDD=10V,VGS=4V, ID =1A,,RGEN=10Ω | 13 | nS | |||
| Switching Times | tr | 54 | nS | |||
| td(off) | 18 | nS | ||||
| tf | 11 | nS | ||||
| Source-Drain Diode | VSD | VGS =0V, IS=4.0A | 1.2 | V |
2010271837_FUXINSEMI-FS8205A_C908265.pdf
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