Load switching P Channel MOSFET FUXINSEMI FDN340P featuring ultra low on resistance and compact size
Key Attributes
Model Number:
FDN340P
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
142mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
500pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
6.6nC@4.5V
Mfr. Part #:
FDN340P
Package:
SOT-23
Product Description
Product Overview
The FDN340P is a P-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Fuxin Semiconductor (implied by www.fuxinsemi.com)
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V,VGS = 0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS =8V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1. | V | |
| Drain-Source On-Resistance | RDS(on) | VGS =-2.5V, ID =-2.0A | 110 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS =-4.5V, ID =-2. A | 90 | m | ||
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 500 | pF | ||
| Output Capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 110 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-10V,VGS =0V,f =1MHz | 8 | pF | ||
| Total Gate Charge | Qg | VDD=-10V, VGS =-4.5V,ID=-1A, RGEN=2.5 | 6.6 | nC | ||
| Gate-Source Charge | Qgs | VDD=-10V, VGS =-4.5V,ID=-1A, RGEN=2.5 | 1.0 | nC | ||
| Gate-Drain Charge | Qg | VDD=-10V, VGS =-4.5V,ID=-1A, RGEN=2.5 | 1.4 | nC | ||
| Turn-on Delay Time | td(on) | VDS =-10V,VGS =-4.5V, ID =-2.4A | 11 | nS | ||
| Turn-on Rise Time | tr | VDS =-10V,VGS =-4.5V, ID =-2.4A | 12 | nS | ||
| Turn-off Delay Time | td(off) | VDS =-10V,VGS =-4.5V, ID =-2.4A | 19 | nS | ||
| Turn-off Fall Time | tf | VDS =-10V,VGS =-4.5V, ID =-2.4A | 30 | nS | ||
| Diode Forward Current | IS | -3.0 | A | |||
| Diode Forward Voltage | VSD | VGS =0V, IS=- A | -1. | V | ||
| Continuous Drain Current | ID | Ta=25 | -3.0 | A | ||
| Pulsed Drain Current | IDM | -10 | A | |||
| Power Dissipation | PD | Ta=25 | 0.7 | W | ||
| Junction Temperature | TJ | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 |
2409302136_FUXINSEMI-FDN340P_C22365185.pdf
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