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quality Axial leaded Schottky barrier rectifiers with environmental compliance and lead free design FUXINSEMI SR5200 factory
quality Axial leaded Schottky barrier rectifiers with environmental compliance and lead free design FUXINSEMI SR5200 factory

Axial leaded Schottky barrier rectifiers with environmental compliance and lead free design FUXINSEMI SR5200

Key Attributes
Model Number: SR5200
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
120A
Reverse Leakage Current (Ir):
200nA
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
920mV@5A
Current - Rectified:
5A
Mfr. Part #:
SR5200
Package:
DO-27
Product Description

Product Overview

The Fuxinsemi 5.0A Axial Leaded Schottky Barrier Rectifiers (SR520 THRU SR5200) offer low power loss and high efficiency with ultra-high-speed switching capabilities. Designed for through-hole mounting, these devices feature a silicon epitaxial planar chip with a metal silicon junction, providing low forward voltage drop and high surge capability. A guardring is integrated for overvoltage protection, and lead-free parts meet environmental standards. These rectifiers are suitable for various applications requiring high current capability and fast response times.

Product Attributes

  • Brand: Fuxinsemi
  • Chip Type: Silicon epitaxial planar chip, metal silicon junction
  • Case Material: Molded plastic, DO-201AD
  • Lead Material: Axial leads, solderable per MIL-STD-202, Method 208
  • Flame Retardant: Epoxy : UL94-V0 rated
  • Environmental Compliance: Lead-free parts meet environmental standards of MIL-STD-19500 /228
  • Halogen-Free Option: Suffix "-H" for Halogen-free part (e.g., SR520-H)
  • Mounting Position: Any

Technical Specifications

Model Repetitive Peak Reverse Voltage (VRRM) (V) RMS Voltage (VRMS) (V) Continuous Reverse Voltage (VR) (V) Max Forward Voltage (VF) @ IF=5.0A (V) Operating Temperature (TJ) (C) Storage Temperature (TSTG) (C)
SR520 20 14 20 0.55 -55 to +125 -55 to +150
SR530 30 21 30 0.55 -55 to +125 -55 to +150
SR540 40 28 40 0.55 -55 to +125 -55 to +150
SR545 45 32 45 0.55 -55 to +125 -55 to +150
SR550 50 35 50 0.70 -55 to +125 -55 to +150
SR560 60 42 60 0.70 -55 to +125 -55 to +150
SR580 80 56 80 0.85 -55 to +125 -55 to +150
SR5100 100 70 100 0.85 -55 to +125 -55 to +150
SR5150 150 105 150 0.92 -55 to +125 -55 to +150
SR5200 200 140 200 0.92 -55 to +125 -55 to +150
Parameter Symbol Conditions Min. Typ. Max. Unit
Forward Rectified Current IO TC = 25C 5.0 A
Forward Surge Current IFSM 8.3ms single half sine-wave (JEDEC method) 120 A
Reverse Current IR VR = VRRM, TJ = 100C 0.5 mA
Thermal Resistance RJA Junction to ambient 38 C/W
Thermal Resistance RJL Junction to lead 1.0 C/W
Diode Junction Capacitance CJ f=1MHz and applied 4V DC reverse voltage 25 pF

Mechanical Data

  • Case: DO-201AD
  • Dimensions: 0.94(24.0) MIN. Length, 0.375(9.5) / 0.285(7.2) Diameter, 0.051(1.30) / 0.043(1.10) Lead Diameter, 0.220(5.6) / 0.197(5.0) Body Diameter
  • Marking: Type number (e.g., SR540). Suffix "H" for Halogen-free (e.g., SR540H)

Soldering Profile

Lead-free temperature profile wave-soldering: Preheat Max gradient 2C/s, Peak Max well time 5s, Cool Down Max gradient -4C/s. Suggested gradient 2C/s or less. Peak soldering temperature not to exceed 260C.


2409300133_FUXINSEMI-SR5200_C784811.pdf

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