high current triac FUXINSEMI BT134-600E 4 amp 600 volt with shock load resistance in to 126 package
Key Attributes
Model Number:
BT134-600E
Product Custom Attributes
Holding Current (Ih):
15mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
25A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT134-600E
Package:
TO-126
Product Description
Product Overview
The BT134 Series TRIACs from Fuxin Semiconductor are 4.0A, 4-quadrant TRIACs in a TO-126 package. They offer high ability to withstand shock loading of large current and high commutation performances, making them especially recommended for use on inductive loads. Applications include washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor
- Origin: FS (from www.fuxinsemi.com)
- Package: TO-126
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Repetitive peak off-state voltage | VDRM | 600 | V | |
| 800 | ||||
| Repetitive peak reverse voltage | VRRM | 600 | V | |
| 800 | ||||
| RMS on-state current | IT(RMS) | 4.0 | A | |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 25 | A | |
| I2t value for fusing (tp=10ms) | I2t | 3.1 | A2s | |
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | -- |
| 10 | ||||
| Peak gate current | IGM | 2 | A | |
| Average gate power dissipation | PG(AV) | 0.5 | W | |
| Junction Temperature | TJ | -40 ~ +125 | ||
| Storage Temperature | TSTG | -40 ~ +150 | ||
| Gate trigger current | IGT | MAX. 10 | mA | VD =12V, IT = 0.1A, Tj =25, -- |
| 25 | VD =12V, IT = 0.1A, Tj =25, | |||
| Gate trigger voltage | VGT | MAX. 1.3 | V | Tj =25, --- |
| Gate non-trigger voltage | VGD | MIN. 0.2 | V | VD =VDRM, Tj =125 |
| Latching current | IL | MAX. 15 | mA | VD =12V, IGT = 0.1A, Tj =25, -- |
| 20 | VD =12V, IGT = 0.1A, Tj =25, | |||
| Holding current | IH | MAX. 15 | mA | Tj =25, --- |
| Critical-rate of rise of commutation voltage | dVD/dt | MIN. 20 | V/s | VD=2/3VDRM, Gate Open, Tj =125 |
| Forward "on" voltage | VTM | MAX. 1.55 | V | ITM =6A, tp=380s |
| Repetitive Peak Off-State Current | IDRM | MAX. 5 | A | VD =VDRM, Tj=25 |
| Repetitive Peak Reverse Current | IRRM | MAX. 500 | A | VR =VRRM, Tj=125 |
| Junction to case thermal resistance (AC) | Rth(j-c) | TYP. 3 | /W | |
| Junction to ambient thermal resistance | Rth(j-a) | TYP. 100 | /W |
2112281630_FUXINSEMI-BT134-600E_C842780.pdf
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