Durable TRIAC FUXINSEMI BT139-600E 16A 600V ideal for solid state relay and motor control applications
Key Attributes
Model Number:
BT139-600E
Product Custom Attributes
Holding Current (Ih):
25mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
140A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT139-600E
Package:
TO-220C
Product Description
Product Overview
The BT139 Series TRIACs from Fuxin Semiconductor are 16A, 4-quadrant devices designed for high shock loading and excellent commutation performance, making them ideal for inductive loads. Applications include washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor
- Package: TO-220C
Technical Specifications
| Symbol | Parameter | Value | Unit | Notes |
| IT(RMS) | RMS on-state current | 16 | A | |
| VDRM / VRRM | Repetitive peak off-state voltage / Repetitive peak reverse voltage | 600 / 800 | V | |
| VTM | Forward "on" voltage | 1.55 | V | ITM = 20A |
| ITSM | Non repetitive surge peak on-state current (full cycle, F=50Hz) | 140 | A | |
| I2t | I2t value for fusing (tp=10ms) | 98 | A2s | |
| dIT/dt | Critical rate of rise of on-state current (IG =2IGT) | 50 / 50 | A/s | -- / |
| IGM | Peak gate current | 2 | A | |
| PG(AV) | Average gate power dissipation | 0.5 | W | |
| TJ | Junction Temperature | -40 ~ +125 | ||
| TSTG | Storage Temperature | -40 ~ +150 | ||
| IGT | Gate trigger current | MAX. 10 / MAX. 25 | mA | VD =12V, IT = 0.1A, Tj =25, -- / |
| VGT | Gate trigger voltage | MAX. 1.3 | V | --- |
| VGD | Gate non-trigger voltage | MIN. 0.2 | V | VD =VDRM, Tj =125 |
| IL | latching current | MAX. 30 / MAX. 40 | mA | VD =12V, IGT = 0.1A, Tj =25, -- / |
| IH | Holding current | MAX. 25 | mA | --- |
| dVD/dt | Critical-rate of rise of commutation voltage | MIN. 20 | V/s | VD=2/3VDRM, Gate Open, Tj =125 |
| IDRM | Repetitive Peak Off-State Current | MAX. 5 | A | VD =VDRM, Tj=25 |
| IRRM | Repetitive Peak Reverse Current | MAX. 1 | mA | VR =VRRM, Tj=125 |
| Rth(j-c) | Junction to case(AC) | TYP. 1.2 | /W | |
| Rth(j-a) | Junction to ambient | TYP. 60 | /W |
2112281630_FUXINSEMI-BT139-600E_C842781.pdf
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