Low Gate Charge Power MOSFET GL GL200N06A8 with Fast Switching and Single Pulse Avalanche Energy Test
Key Attributes
Model Number:
GL200N06A8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
208A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
330pF
Number:
1 N-channel
Output Capacitance(Coss):
850pF
Pd - Power Dissipation:
333W
Input Capacitance(Ciss):
9.1nF
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
GL200N06A8
Package:
TO-220AB-3
Product Description
Product Overview
The GL200N06A8 is a N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology and design for excellent RDS(ON) with low gate charge. It is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. The MOSFET is packaged in a TO-220AB package that conforms to RoHS standards. Key features include fast switching, low gate charge and Rdson, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Product Type: N-Channel Power MOSFET
- Package: TO-220AB
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Test Conditions | Rating | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Absolute Ratings (Tc= 25 unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | 60 | V | |||
| ID | Continuous Drain Current | 208 | A | |||
| ID | Continuous Drain Current TC = 100 C | 147 | A | |||
| IDM | Pulsed Drain Current | 832 | A | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| EAS a2 | Single Pulse Avalanche Energy | 1600 | mJ | |||
| EAR a1 | Avalanche Energy, Repetitive | 95 | mJ | |||
| IAR a1 | Avalanche Current | 80 | A | |||
| dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |||
| PD | Power Dissipation | 333 | W | |||
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 to 175 | 175 | |||
| TL | Maximum Temperature for Soldering | 300 | ||||
| VDSS | 60 | V | ||||
| ID | 208 | A | ||||
| PD | 333 | W | ||||
| RDS(ON)type | 2.4 | m | ||||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | 60 | V | 60 | -- | -- |
| BVDSS/TJ | Bvdss Temperature Coefficient | -- | V/ | 0.1 | -- | |
| IDSS | Drain to Source Leakage Current | -- | A | -- | 1 | |
| IDSS | Drain to Source Leakage Current VDS = 48V, VG S= 0V, Ta = 125 | -- | A | -- | 250 | |
| IGSS(F) | Gate to Source Forward Leakage | -- | A | -- | 1 | |
| IGSS(R) | Gate to Source Reverse Leakage | -- | A | -- | -1 | |
| ON Characteristics | ||||||
| RDS(ON) | Drain-to-Source On-Resistance | -- | m | 2.4 | 3.0 | |
| VGS(TH) | Gate Threshold Voltage | 2.0 | V | 2.0 | 3.0 | 4.0 |
| Dynamic Characteristics | ||||||
| gfs | Forward Transconductance | 110 | S | 110 | -- | -- |
| Ciss | Input Capacitance | -- | pF | 9100 | -- | |
| Coss | Output Capacitance | -- | pF | 850 | -- | |
| Crss | Reverse Transfer Capacitance | -- | pF | 330 | -- | |
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | -- | ns | 55 | -- | |
| tr | Rise Time | -- | ns | 160 | -- | |
| td(OFF) | Turn-Off Delay Time | -- | ns | 95 | -- | |
| tf | Fall Time | -- | ns | 80 | -- | |
| Qg | Total Gate Charge | -- | nC | 120 | -- | |
| Qgs | Gate to Source Charge | -- | nC | 40 | -- | |
| Qgd | Gate to Drain (Miller)Charge | -- | nC | 33 | -- | |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | -- | A | -- | 200 | |
| ISM | Maximum Pulsed Current (Body Diode) | -- | A | -- | 832 | |
| VSD | Diode Forward Voltage | -- | V | -- | 1.5 | |
| trr | Reverse Recovery Time | -- | ns | 99 | -- | |
| Qrr | Reverse Recovery Charge | -- | nC | 190 | -- | |
| RJC | Junction-to-Case Thermal Resistance | /W | 0.38 | |||
2411220131_GL-GL200N06A8_C2886425.pdf
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