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quality Power Switching N Channel MOSFET GL GL80N03A4 Featuring TO 252 Package and RoHS Compliance for Industrial factory
quality Power Switching N Channel MOSFET GL GL80N03A4 Featuring TO 252 Package and RoHS Compliance for Industrial factory

Power Switching N Channel MOSFET GL GL80N03A4 Featuring TO 252 Package and RoHS Compliance for Industrial

Key Attributes
Model Number: GL80N03A4
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF
Number:
1 N-channel
Output Capacitance(Coss):
460pF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
2.33nF
Gate Charge(Qg):
51nC@10V
Mfr. Part #:
GL80N03A4
Package:
TO-252-2
Product Description

Product Overview

The GL80N03A4 is a high-performance N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Engineered with advanced trench technology, it delivers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device features a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, and an excellent package for effective heat dissipation, adhering to RoHS standards in its TO-252 form factor.

Product Attributes

  • Brand: GL Silicon
  • Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
  • Channel Type: N-Channel
  • Package Type: TO-252
  • Certifications: RoHS standard compliant

Technical Specifications

Symbol Parameter Test Conditions Rating Units Min. Typ. Max.
Absolute Ratings (Tc= 25 unless otherwise specified)
VDSS Drain-to-Source Voltage 30 V
ID Continuous Drain Current 80 A
IDM Pulsed Drain Current 170 A
VGS Gate-to-Source Voltage 20 V
PD Power Dissipation 83 W
EAS Single pulse avalanche energya5 306 mJ
TJ, Tstg Operating Junction and Storage Temperature Range 55 175
Electrical Characteristics (Tc= 25 unless otherwise specified)
OFF Characteristics
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250A 30 V
IDSS Drain to Source Leakage Current VDS=30V, VGS= 0V,Ta = 25 A 1.0
IGSS(F) Gate to Source Forward Leakage VGS=+20V A 0.1
IGSS(R) Gate to Source Reverse Leakage VGS=-20V A -0.1
ON Characteristicsa3
RDS(ON)1 Drain-to-Source On-Resistance VGS=10V,ID=30A m 3.8 5.0
RDS(ON)2 Drain-to-Source On-Resistance VGS=4.5V,ID=20A m 4.5 6.0
VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250A V 1.0 1.6 3.0
Dynamic Characteristicsa4
gfs Forward Transconductance VDS=5V,ID=24A 20 S
Ciss Input Capacitance VGS=0V,VDS=15V f=1.0MHz pF 2330
Coss Output Capacitance pF 460
Crss Reverse Transfer Capacitance pF 230
Resistive Switching Characteristicsa4
td(ON) Turn-on Delay Time VDD=10V,ID=30A VGS=10V,RG=2.7 ns 20
tr Rise Time ns 15
td(OFF) Turn-Off Delay Time ns 60
tf Fall Time ns 10
Qg Total Gate Charge VDD=10V, ID=30A VGS=10V nC 51
Qgs Gate to Source Charge nC 14
Qgd Gate to Drain (Miller)Charge nC 11
Source-Drain Diode Characteristics
IS Continuous Source Current a2(Body Diode) A 80
VSD Diode Forward Voltagea3 IS=80A,VGS=0V V 1.2
RJC Junction-to-Casea2 /W 1.8

a1: Repetitive Rating: Pulse width limited by maximum junction temperature.
a2: Surface Mounted on FR4 Board, t10sec.
a3: Pulse Test: Pulse Width300s, Duty Cycle2%.
a4: Guaranteed by design, not subject to production.
a5: EAS conditionTj=25,VDD=15V,VG=10V,L=0.5mH,Rg=25,IAS=35A


2411220037_GL-GL80N03A4_C2886411.pdf

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