High speed switching diode FUXINSEMI MMBD7000LT1G suitable for electronic circuits needing switching
Key Attributes
Model Number:
MMBD7000LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
3uA@100V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
820mV@10mA
Current - Rectified:
200mA
Mfr. Part #:
MMBD7000LT1G
Package:
SOT-23
Product Description
Product Overview
The MMBD7000LT1G is a high-speed switching diode designed for general-purpose applications. It offers fast switching speeds and is suitable for various electronic circuits requiring efficient signal routing and switching.
Product Attributes
- Brand: ON Semiconductor
- Package Type: SOT-23
Technical Specifications
| Parameter | Value |
|---|---|
| Part Number | MMBD7000LT1G |
| Diode Type | High Speed Switching Diode |
| Maximum Repetitive Reverse Voltage (Vrrm) | 70 V |
| Maximum DC Forward Current (If) | 0.2 A |
| Maximum Forward Voltage (Vf) | 1.25 V @ 0.1 A |
| Maximum Reverse Leakage Current (Ir) | 25 nA @ 70 V |
| Junction Capacitance (Cj) | 4 pF |
| Operating Temperature Range | -55C to +150C |
| Mounting Type | Surface Mount |
2410010102_FUXINSEMI-MMBD7000LT1G_C3018493.pdf
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