High Gain Silicon NPN Transistor FUXINSEMI S9018 Suitable for FM VHF Amplifier and Oscillator Circuits
Key Attributes
Model Number:
S9018
Product Custom Attributes
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
800MHz
Type:
NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
15V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S9018
Package:
SOT-23
Product Description
S9018 General Purpose Transistor
The S9018 is an NPN silicon general-purpose transistor designed for AM/FM amplifier and local oscillator applications in FM/VHF tuners. It offers high current gain and a significant bandwidth product.
Product Attributes
- Brand: Fuxinsemi
- Material: Silicon
- Type: NPN Transistor
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 30 | V | |||
| Collector-Emitter Voltage | VCEO | 15 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 50 | mA | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 30 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA, IB=0 | 15 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=12V, IE=0 | 0.05 | A | ||
| Collector cut-off current | ICEO | VCE=12V, IB=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 3V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=5V, IC= 1mA | 70 | 200 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB= 1mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=10mA, IB= 1mA | 1.4 | V | ||
| Transition frequency | fT | VCE=5V, IC= 5mA, f=400MHz | 800 | MHz |
2101141105_FUXINSEMI-S9018_C908257.pdf
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