Switching Amplifier Transistor GOODWORK MMBT3904W NPN Silicon Epitaxial Planar for Electronic Circuit
Key Attributes
Model Number:
MMBT3904W
Product Custom Attributes
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904W
Package:
SOT-323
Product Description
Product Overview
The MMBT3904W is an NPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers reliable performance in various electronic circuits.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Collector Base Voltage | VCBO | 60 | V | |
| Collector Emitter Voltage | VCEO | 40 | V | |
| Emitter Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 200 | mA | |
| Total Power Dissipation | Ptot | 200 | mW | Ta = 25 OC |
| Junction Temperature | Tj | 150 | OC | |
| Storage Temperature Range | Tstg | -55 to +150 | OC | |
| DC Current Gain | hFE | 40-300 | - | VCE = 1 V, IC = 0.1 mA to 100 mA |
| Collector Emitter Cutoff Current | ICES | -50 | nA | VCE = 30 V |
| Emitter Base Cutoff Current | IEBO | -50 | nA | VEB = 3 V |
| Collector Base Breakdown Voltage | V(BR)CBO | 60 | V | IC = 10 A |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = 1 mA |
| Emitter Base Breakdown Voltage | V(BR)EBO | 6 | V | IE = 10 A |
| Collector Emitter Saturation Voltage | VCE(sat) | 0.2-0.3 | V | IC = 10 mA, IB = 1 mA / IC = 50 mA, IB = 5 mA |
| Base Emitter Saturation Voltage | VBE(sat) | 0.65-0.95 | V | IC = 10 mA, IB = 1 mA / IC = 50 mA, IB = 5 mA |
| Transition Frequency | fT | 300 | MHz | VCE = 20 V, -IE = 10 mA, f = 100 MHz |
| Collector Output Capacitance | Cob | -4 | pF | VCB = 10 V, f = 100 KHz |
| Delay Time | td | -35 | ns | VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA |
| Rise Time | tr | -35 | ns | VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA |
| Storage Time | tstg | -200 | ns | VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA |
| Fall Time | tf | -50 | ns | VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA |
2410121513_GOODWORK-MMBT3904W_C22466880.pdf
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