SOT363 dual NPN transistor GOODWORK BC847BDW1T1G-GK ideal for general purpose amplifier applications

Key Attributes
Model Number: BC847BDW1T1G-GK
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
200MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC847BDW1T1G-GK
Package:
SOT-363
Product Description

Product Overview

This device is designed for general purpose amplifier applications. It is a SOT-363 DUAL TRANSISTOR (NPN+NPN) with part numbers BC847BS/BC847BDW1T1G.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-Base VoltageVCBO50V
Collector-Emitter VoltageVCEO45V
Emitter-Base VoltageVEBO6V
Collector Current-ContinuousIC100mA
Power DissipationPDTa=25 unless otherwise noted200mW
Thermal Resistance. Junction to AmbientRJA625/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=10A,IE=050V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=045V
Emitter-base breakdown voltageV(BR)EBOIE=10A,IC=06V
Collector cut-off currentICBOVCB=30V,IE=015nA
Emitter cut-off currentIEBOVEB =4V, IC=015nA
DC current gain*hFEVCE=5V,IC=2mA200450
Collector-emitter saturation voltageVCE(sat)(1)IC=10mA,IB=0.5mA0.25V
Collector-emitter saturation voltageVCE(sat)(2)IC=100mA,IB=5mA0.65V
Base-emitter voltageVBE(1)VCE=5V,IC=2mA0.580.7V
Base-emitter voltageVBE(2)VCE=5V,IC=10mA0.77V
Transition frequencyfTVCE=5V,IC=20mA ,f=100MHz200MHz
Collector output capacitanceCobVCB=10V,IE=0,f=1MHz2pF

2411281058_GOODWORK-BC847BDW1T1G-GK_C42395465.pdf

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